HP8K22TB

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

Avalanche Energy Rating (Eas) :

11.4 mJ

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Power - Max :

25W

FET Type :

2 N-Channel (Half Bridge)

Current - Continuous Drain (Id) @ 25°C :

27A 57A

ECCN Code :

EAR99

Gate Charge (Qg) (Max) @ Vgs :

16.8nC @ 10V

Case Connection :

DRAIN SOURCE

Package / Case :

8-PowerTDFN

Terminal Form :

Flat

Reach Compliance Code :

not_compliant

Input Capacitance (Ciss) (Max) @ Vds :

1080pF @ 15V

Factory Lead Time :

20 Weeks

Configuration :

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

Drain-source On Resistance-Max :

0.0133Ohm

Drain to Source Voltage (Vdss) :

30V

Number of Elements :

2

Operating Temperature :

-55°C~150°C TJ

Terminal Position :

Dual

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Number of Terminations :

6

JESD-30 Code :

R-PDSO-F6

Transistor Element Material :

SILICON

DS Breakdown Voltage-Min :

30V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain Current-Max (Abs) (ID) :

12A

Surface Mount :

yes

Pulsed Drain Current-Max (IDM) :

48A

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Transistor Application :

SWITCHING

Mounting Type :

Surface Mount

Rds On (Max) @ Id, Vgs :

4.6m Ω @ 20A, 10V

Packaging :

Cut Tape (CT)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE