HFA3127BZ

Manufacturer :

Intersil (Renesas Electronics Corporation)

Product Category :

Transistors - Bipolar (BJT) - RF

ECCN Code :

EAR99

Collector Emitter Saturation Voltage :

500mV

Min Operating Temperature :

-55°C

Time@Peak Reflow Temperature-Max (s) :

30

Package / Case :

SOIC

Power Dissipation :

150mW

Mount :

Surface Mount

Number of Terminations :

16

Terminal Finish :

Matte Tin (Sn) - annealed

Radiation Hardening :

No

JEDEC-95 Code :

MS-012AC

Pin Count :

16

Peak Reflow Temperature (Cel) :

260

REACH SVHC :

No SVHC

Frequency - Transition :

8GHz

Gain Bandwidth Product :

8 GHz

Power Dissipation-Max :

150mW

Number of Elements :

5

Terminal Position :

Dual

Factory Lead Time :

7 Weeks

HTS Code :

8541.21.00.75

Number of Pins :

16

Width :

4mm

Max Operating Temperature :

125°C

Height :

1.5mm

Collector Emitter Breakdown Voltage :

8V

Collector Emitter Voltage (VCEO) :

8V

RoHS Status :

RoHS Compliant

Frequency :

8GHz

Lead Free :

Lead Free

Collector Base Voltage (VCBO) :

12V

Transition Frequency :

8000MHz

Voltage - Rated DC :

8V

Terminal Form :

Gull wing

Packaging :

Bulk

Continuous Collector Current :

65mA

Configuration :

SEPARATE, 5 ELEMENTS

Current Rating :

65mA

Emitter Base Voltage (VEBO) :

5.5V

JESD-609 Code :

e3

Published :

2000

Transistor Application :

AMPLIFIER

Length :

10mm

DC Current Gain-Min (hFE) :

40

Frequency (Max) :

8GHz

Pbfree Code :

yes

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Polarity :

NPN

Max Collector Current :

65mA