HFA3096B

Manufacturer :

Intersil (Renesas Electronics Corporation)

Product Category :

Transistors - Bipolar (BJT) - RF

Current - Collector (Ic) (Max) :

65mA

JEDEC-95 Code :

MS-012AC

Voltage - Collector Emitter Breakdown (Max) :

12V 15V

Power Dissipation :

150mW

Transition Frequency :

8000MHz

Additional Feature :

LOW NOISE

Emitter Base Voltage (VEBO) :

5.5V

Noise Figure (dB Typ @ f) :

3.5dB @ 1GHz

Collector Base Voltage (VCBO) :

12V

DC Current Gain (hFE) (Min) @ Ic, Vce :

40 @ 10mA 2V / 20 @ 10mA 2V

Frequency - Transition :

8GHz 5.5GHz

Number of Terminations :

16

Collector Emitter Voltage (VCEO) :

8V

Highest Frequency Band :

ULTRA HIGH FREQUENCY B

Max Junction Temperature (Tj) :

150°C

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Package / Case :

16-SOIC (0.154, 3.90mm Width)

Collector Emitter Saturation Voltage :

300mV

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Surface Mount :

yes

Pin Count :

16

Height :

1.75mm

Base Part Number :

HFA3096

Operating Temperature :

150°C TJ

Published :

2000

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

Number of Elements :

5

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Polarity :

NPN, PNP

Terminal Position :

Dual

JESD-30 Code :

R-PDSO-G16

Transistor Type :

3 NPN + 2 PNP

Factory Lead Time :

8 Weeks

Transistor Application :

AMPLIFIER

Terminal Form :

Gull wing

RoHS Status :

ROHS3 Compliant

Max Collector Current :

37mA