HFA3096B96

Manufacturer :

Harris Corporation

Product Category :

Transistors - Bipolar (BJT) - RF

Voltage - Rated DC :

8V

Polarity/Channel Type :

NPN AND PNP

Additional Feature :

LOW NOISE

Package / Case :

SOIC

RoHS Status :

RoHS Compliant

Mount :

Surface Mount

Collector Emitter Breakdown Voltage :

15V

Lead Free :

Contains Lead

Terminal Position :

Dual

Power Dissipation-Max :

150mW

JEDEC-95 Code :

MS-012AC

Highest Frequency Band :

ULTRA HIGH FREQUENCY B

Transistor Application :

AMPLIFIER

Number of Terminations :

16

Number of Elements :

5

Max Collector Current :

65mA

Operating Temperature (Max) :

150°C

JESD-609 Code :

e0

DC Current Gain-Min (hFE) :

40

ECCN Code :

EAR99

Qualification Status :

Not Qualified

Terminal Finish :

Tin/Lead (Sn/Pb)

JESD-30 Code :

R-PDSO-G16

Transition Frequency :

8000MHz

VCEsat-Max :

0.5 V

Published :

2000

Terminal Form :

Gull wing

Configuration :

SEPARATE, 5 ELEMENTS

Packaging :

Bulk

Current Rating :

65mA

Frequency - Transition :

5.5GHz

Transistor Element Material :

SILICON

HTS Code :

8541.21.00.75