FJP13009TU
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- Mfr.Part #
- FJP13009TU
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN 400V 12A TO220-3
- Stock
- 4,088
- In Stock ：
- 4,088
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 3A, 12A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pbfree Code :
- yes
- Max Collector Current :
- 12A
- Transistor Application :
- SWITCHING
- Collector Emitter Breakdown Voltage :
- 400V
- Weight :
- 1.8g
- hFE Min :
- 6
- REACH SVHC :
- No SVHC
- Emitter Base Voltage (VEBO) :
- 9V
- Collector Emitter Voltage (VCEO) :
- 400V
- Gain Bandwidth Product :
- 4MHz
- Collector Emitter Saturation Voltage :
- 1V
- Operating Temperature :
- 150°C TJ
- Voltage - Rated DC :
- 400V
- Element Configuration :
- Single
- Height :
- 16.51mm
- Transistor Type :
- NPN
- Number of Elements :
- 1
- RoHS Status :
- ROHS3 Compliant
- Current Rating :
- 12A
- Base Part Number :
- FJP13009
- Max Power Dissipation :
- 100W
- Lead Free :
- Lead Free
- Factory Lead Time :
- 4 Weeks
- JEDEC-95 Code :
- TO-220AB
- Mounting Type :
- Through Hole
- Frequency :
- 4MHz
- Power Dissipation :
- 100W
- ECCN Code :
- EAR99
- Mount :
- Through Hole
- Collector Base Voltage (VCBO) :
- 700V
- JESD-609 Code :
- e3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 8 @ 5A 5V
- Radiation Hardening :
- No
- Packaging :
- Tube
- Length :
- 10.67mm
- Transistor Element Material :
- SILICON
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Number of Terminations :
- 3
- Number of Pins :
- 3
- Terminal Finish :
- Tin (Sn)
- Width :
- 4.83mm
- Polarity/Channel Type :
- NPN
- Package / Case :
- TO-220-3
- Transition Frequency :
- 4MHz
- Published :
- 2017
- Datasheets
- FJP13009TU
NPN 150°C TJ 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole
FJP13009TU Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 8 @ 5A 5V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 1V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 3V @ 3A, 12A.The emitter base voltage can be kept at 9V for high efficiency.The current rating of this fuse is 12A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 4MHz.Single BJT transistor is possible to have a collector current as low as 12A volts at Single BJT transistors maximum.
FJP13009TU Features
the DC current gain for this device is 8 @ 5A 5V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 3V @ 3A, 12A
the emitter base voltage is kept at 9V
the current rating of this device is 12A
a transition frequency of 4MHz
FJP13009TU Applications
There are a lot of ON Semiconductor
FJP13009TU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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