FJP13009TU
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- Mfr.Part #
- FJP13009TU
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN 400V 12A TO220-3
- Stock
- 4,088
- In Stock ：
- 4,088
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Package / Case :
- TO-220-3
- Mounting Type :
- Through Hole
- Terminal Finish :
- Tin (Sn)
- Number of Elements :
- 1
- RoHS Status :
- ROHS3 Compliant
- Emitter Base Voltage (VEBO) :
- 9V
- Factory Lead Time :
- 4 Weeks
- Radiation Hardening :
- No
- Max Collector Current :
- 12A
- Power Dissipation :
- 100W
- Gain Bandwidth Product :
- 4MHz
- REACH SVHC :
- No SVHC
- Transistor Application :
- SWITCHING
- Collector Base Voltage (VCBO) :
- 700V
- Frequency :
- 4MHz
- Operating Temperature :
- 150°C TJ
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 8 @ 5A 5V
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 3A, 12A
- Length :
- 10.67mm
- Number of Terminations :
- 3
- Height :
- 16.51mm
- JEDEC-95 Code :
- TO-220AB
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- Base Part Number :
- FJP13009
- Polarity/Channel Type :
- NPN
- Transistor Type :
- NPN
- Packaging :
- Tube
- Lead Free :
- Lead Free
- Collector Emitter Breakdown Voltage :
- 400V
- Weight :
- 1.8g
- Current Rating :
- 12A
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Collector Emitter Saturation Voltage :
- 1V
- Mount :
- Through Hole
- Voltage - Rated DC :
- 400V
- hFE Min :
- 6
- JESD-609 Code :
- e3
- Collector Emitter Voltage (VCEO) :
- 400V
- ECCN Code :
- EAR99
- Pbfree Code :
- yes
- Max Power Dissipation :
- 100W
- Element Configuration :
- Single
- Number of Pins :
- 3
- Published :
- 2017
- Transition Frequency :
- 4MHz
- Width :
- 4.83mm
- Datasheets
- FJP13009TU
FJP13009TU Documents
NPN 150°C TJ 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole
FJP13009TU Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 8 @ 5A 5V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 1V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 3V @ 3A, 12A.The emitter base voltage can be kept at 9V for high efficiency.The current rating of this fuse is 12A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 4MHz.Single BJT transistor is possible to have a collector current as low as 12A volts at Single BJT transistors maximum.
FJP13009TU Features
the DC current gain for this device is 8 @ 5A 5V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 3V @ 3A, 12A
the emitter base voltage is kept at 9V
the current rating of this device is 12A
a transition frequency of 4MHz
FJP13009TU Applications
There are a lot of ON Semiconductor
FJP13009TU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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