FJP13009
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- Mfr.Part #
- FJP13009
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN 400V 12A TO220-3
- Stock
- 14,339
- In Stock ：
- 14,339
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current Rating :
- 12A
- Transistor Application :
- SWITCHING
- Collector Emitter Saturation Voltage :
- 1V
- Radiation Hardening :
- No
- Collector Emitter Voltage (VCEO) :
- 400V
- Width :
- 4.83mm
- Power Dissipation :
- 100W
- Height :
- 16.51mm
- hFE Min :
- 6
- Lead Free :
- Lead Free
- Max Collector Current :
- 12A
- JEDEC-95 Code :
- TO-220AB
- Element Configuration :
- Single
- Transistor Type :
- NPN
- Factory Lead Time :
- 4 Weeks
- Number of Terminations :
- 3
- Transistor Element Material :
- SILICON
- Pbfree Code :
- yes
- Gain Bandwidth Product :
- 4MHz
- Polarity/Channel Type :
- NPN
- Voltage - Rated DC :
- 400V
- Transition Frequency :
- 4MHz
- Collector Emitter Breakdown Voltage :
- 400V
- Weight :
- 1.8g
- Package / Case :
- TO-220-3
- ECCN Code :
- EAR99
- JESD-609 Code :
- e3
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 3A, 12A
- Published :
- 2017
- Number of Pins :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 8 @ 5A 5V
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Through Hole
- Terminal Finish :
- Tin (Sn)
- Frequency :
- 4MHz
- REACH SVHC :
- No SVHC
- Base Part Number :
- FJP13009
- Operating Temperature :
- 150°C TJ
- Number of Elements :
- 1
- Emitter Base Voltage (VEBO) :
- 9V
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Packaging :
- Tube
- Length :
- 10.67mm
- Mount :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Base Voltage (VCBO) :
- 700V
- Max Power Dissipation :
- 100W
- Datasheets
- FJP13009
NPN 150°C TJ 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole
FJP13009TU Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 8 @ 5A 5V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 1V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 3V @ 3A, 12A.The emitter base voltage can be kept at 9V for high efficiency.The current rating of this fuse is 12A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 4MHz.Single BJT transistor is possible to have a collector current as low as 12A volts at Single BJT transistors maximum.
FJP13009TU Features
the DC current gain for this device is 8 @ 5A 5V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 3V @ 3A, 12A
the emitter base voltage is kept at 9V
the current rating of this device is 12A
a transition frequency of 4MHz
FJP13009TU Applications
There are a lot of ON Semiconductor
FJP13009TU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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