FJP13007H2

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Mfr.Part #
FJP13007H2
Manufacturer
onsemi
Package / Case
TO-220-3
Datasheet
Download
Description
TRANS NPN 400V 8A TO220-3
Stock
5,868
In Stock :
5,868

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Vce Saturation (Max) @ Ib, Ic :
3V @ 2A, 8A
Pbfree Code :
yes
Emitter Base Voltage (VEBO) :
9V
Mount :
Through Hole
Base Part Number :
FJP13007
Package / Case :
TO-220-3
Number of Pins :
3
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Current Rating :
8A
Operating Temperature :
150°C TJ
Collector Emitter Saturation Voltage :
1V
Voltage - Rated DC :
400V
Polarity/Channel Type :
NPN
Weight :
1.8g
Lifecycle Status :
ACTIVE (Last Updated: 2 days ago)
Collector Base Voltage (VCBO) :
700V
Mounting Type :
Through Hole
Lead Free :
Lead Free
Frequency :
4MHz
RoHS Status :
ROHS3 Compliant
Transistor Element Material :
SILICON
Number of Elements :
1
DC Current Gain (hFE) (Min) @ Ic, Vce :
26 @ 2A 5V
Gain Bandwidth Product :
4MHz
JEDEC-95 Code :
TO-220AB
Qualification Status :
Not Qualified
Transistor Type :
NPN
Terminal Finish :
Tin (Sn)
hFE Min :
5
Collector Emitter Voltage (VCEO) :
400V
JESD-609 Code :
e3
Number of Terminations :
3
Transition Frequency :
4MHz
Element Configuration :
Single
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Packaging :
Tube
Max Power Dissipation :
80W
Transistor Application :
SWITCHING
Max Collector Current :
8A
Factory Lead Time :
5 Weeks
Published :
2011
Power Dissipation :
80W
Collector Emitter Breakdown Voltage :
400V
ECCN Code :
EAR99
Datasheets
FJP13007H2
Introducing Transistors - Bipolar (BJT) - Single onsemi FJP13007H2 from Chip IC,where excellence meets affordability. This product stands out with its Base Part Number:FJP13007, Package / Case:TO-220-3, Number of Pins:3, Operating Temperature:150°C TJ, Mounting Type:Through Hole, Number of Terminations:3, FJP13007H2 pinout, FJP13007H2 datasheet PDF, FJP13007H2 amp .Beyond Transistors - Bipolar (BJT) - Single onsemi FJP13007H2 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FJP13007H2


NPN 150°C TJ 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole

FJP13007H2TU Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 26 @ 2A 5V.The collector emitter saturation voltage is 1V, which allows for maximum design flexibility.When VCE saturation is 3V @ 2A, 8A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 9V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 8A.In the part, the transition frequency is 4MHz.A maximum collector current of 8A volts can be achieved.

FJP13007H2TU Features


the DC current gain for this device is 26 @ 2A 5V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 3V @ 2A, 8A
the emitter base voltage is kept at 9V
the current rating of this device is 8A
a transition frequency of 4MHz


FJP13007H2TU Applications


There are a lot of ON Semiconductor
FJP13007H2TU applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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