FJP13009H2TU
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- Mfr.Part #
- FJP13009H2TU
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN 400V 12A TO220-3
- Stock
- 2,058
- In Stock ：
- 2,058
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Voltage (VCEO) :
- 400V
- Emitter Base Voltage (VEBO) :
- 9V
- RoHS Status :
- ROHS3 Compliant
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 3A, 12A
- Transition Frequency :
- 4MHz
- hFE Min :
- 6
- ECCN Code :
- EAR99
- Polarity/Channel Type :
- NPN
- Operating Temperature :
- 150°C TJ
- Frequency :
- 4MHz
- Number of Terminations :
- 3
- Width :
- 4.5mm
- Collector Emitter Saturation Voltage :
- 1V
- Collector Base Voltage (VCBO) :
- 700V
- Lead Free :
- Lead Free
- Packaging :
- Tube
- JESD-609 Code :
- e3
- Number of Pins :
- 3
- Element Configuration :
- Single
- Factory Lead Time :
- 8 Weeks
- Max Power Dissipation :
- 100W
- JEDEC-95 Code :
- TO-220AB
- REACH SVHC :
- No SVHC
- Power Dissipation :
- 100W
- Package / Case :
- TO-220-3
- Height :
- 9.2mm
- Length :
- 9.9mm
- Number of Elements :
- 1
- Max Collector Current :
- 12A
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Published :
- 2017
- Transistor Application :
- SWITCHING
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Type :
- NPN
- Terminal Finish :
- Tin (Sn)
- Gain Bandwidth Product :
- 4MHz
- Voltage - Rated DC :
- 400V
- Mounting Type :
- Through Hole
- Mount :
- Through Hole
- Transistor Element Material :
- SILICON
- Base Part Number :
- FJP13009
- Weight :
- 1.8g
- Pbfree Code :
- yes
- Current Rating :
- 12A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 15 @ 5A 5V
- Collector Emitter Breakdown Voltage :
- 400V
- Radiation Hardening :
- No
- Datasheets
- FJP13009H2TU
NPN 150°C TJ 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole
FJP13009H2TU Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 15 @ 5A 5V.With a collector emitter saturation voltage of 1V, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 3V @ 3A, 12A.If the emitter base voltage is kept at 9V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 12A.A transition frequency of 4MHz is present in the part.Collector current can be as low as 12A volts at its maximum.
FJP13009H2TU Features
the DC current gain for this device is 15 @ 5A 5V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 3V @ 3A, 12A
the emitter base voltage is kept at 9V
the current rating of this device is 12A
a transition frequency of 4MHz
FJP13009H2TU Applications
There are a lot of ON Semiconductor
FJP13009H2TU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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