FJP13009H2TU
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- Mfr.Part #
- FJP13009H2TU
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN 400V 12A TO220-3
- Stock
- 2,058
- In Stock ：
- 2,058
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Polarity/Channel Type :
- NPN
- Number of Terminations :
- 3
- Transistor Application :
- SWITCHING
- Frequency :
- 4MHz
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Through Hole
- Collector Emitter Voltage (VCEO) :
- 400V
- Power Dissipation :
- 100W
- Weight :
- 1.8g
- Published :
- 2017
- Transistor Element Material :
- SILICON
- JESD-609 Code :
- e3
- Terminal Finish :
- Tin (Sn)
- Packaging :
- Tube
- Mount :
- Through Hole
- Collector Base Voltage (VCBO) :
- 700V
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Radiation Hardening :
- No
- Voltage - Rated DC :
- 400V
- Max Power Dissipation :
- 100W
- Transition Frequency :
- 4MHz
- RoHS Status :
- ROHS3 Compliant
- Max Collector Current :
- 12A
- Collector Emitter Breakdown Voltage :
- 400V
- Number of Pins :
- 3
- REACH SVHC :
- No SVHC
- ECCN Code :
- EAR99
- Package / Case :
- TO-220-3
- Length :
- 9.9mm
- Transistor Type :
- NPN
- Height :
- 9.2mm
- JEDEC-95 Code :
- TO-220AB
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 3A, 12A
- Operating Temperature :
- 150°C TJ
- Current Rating :
- 12A
- Factory Lead Time :
- 8 Weeks
- Element Configuration :
- Single
- Collector Emitter Saturation Voltage :
- 1V
- hFE Min :
- 6
- Base Part Number :
- FJP13009
- Emitter Base Voltage (VEBO) :
- 9V
- Lead Free :
- Lead Free
- Pbfree Code :
- yes
- Width :
- 4.5mm
- Gain Bandwidth Product :
- 4MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 15 @ 5A 5V
- Datasheets
- FJP13009H2TU
FJP13009H2TU Documents
NPN 150°C TJ 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole
FJP13009H2TU Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 15 @ 5A 5V.With a collector emitter saturation voltage of 1V, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 3V @ 3A, 12A.If the emitter base voltage is kept at 9V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 12A.A transition frequency of 4MHz is present in the part.Collector current can be as low as 12A volts at its maximum.
FJP13009H2TU Features
the DC current gain for this device is 15 @ 5A 5V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 3V @ 3A, 12A
the emitter base voltage is kept at 9V
the current rating of this device is 12A
a transition frequency of 4MHz
FJP13009H2TU Applications
There are a lot of ON Semiconductor
FJP13009H2TU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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