FJP13009H2
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- Mfr.Part #
- FJP13009H2
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN 400V 12A TO220-3
- Stock
- 12,651
- In Stock ：
- 12,651
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Current Rating :
- 12A
- Radiation Hardening :
- No
- Height :
- 9.2mm
- Base Part Number :
- FJP13009
- Terminal Finish :
- Tin (Sn)
- Transistor Element Material :
- SILICON
- Collector Emitter Saturation Voltage :
- 1V
- Number of Terminations :
- 3
- Published :
- 2017
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 15 @ 5A 5V
- Gain Bandwidth Product :
- 4MHz
- Lead Free :
- Lead Free
- JEDEC-95 Code :
- TO-220AB
- Package / Case :
- TO-220-3
- Pbfree Code :
- yes
- RoHS Status :
- ROHS3 Compliant
- Transition Frequency :
- 4MHz
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 3A, 12A
- Packaging :
- Tube
- Length :
- 9.9mm
- Factory Lead Time :
- 8 Weeks
- Transistor Type :
- NPN
- ECCN Code :
- EAR99
- JESD-609 Code :
- e3
- hFE Min :
- 6
- Number of Pins :
- 3
- Width :
- 4.5mm
- REACH SVHC :
- No SVHC
- Max Power Dissipation :
- 100W
- Collector Base Voltage (VCBO) :
- 700V
- Collector Emitter Voltage (VCEO) :
- 400V
- Collector Emitter Breakdown Voltage :
- 400V
- Emitter Base Voltage (VEBO) :
- 9V
- Operating Temperature :
- 150°C TJ
- Mounting Type :
- Through Hole
- Voltage - Rated DC :
- 400V
- Weight :
- 1.8g
- Power Dissipation :
- 100W
- Polarity/Channel Type :
- NPN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Frequency :
- 4MHz
- Max Collector Current :
- 12A
- Transistor Application :
- SWITCHING
- Mount :
- Through Hole
- Number of Elements :
- 1
- Element Configuration :
- Single
- Datasheets
- FJP13009H2
NPN 150°C TJ 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole
FJP13009H2TU Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 15 @ 5A 5V.With a collector emitter saturation voltage of 1V, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 3V @ 3A, 12A.If the emitter base voltage is kept at 9V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 12A.A transition frequency of 4MHz is present in the part.Collector current can be as low as 12A volts at its maximum.
FJP13009H2TU Features
the DC current gain for this device is 15 @ 5A 5V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 3V @ 3A, 12A
the emitter base voltage is kept at 9V
the current rating of this device is 12A
a transition frequency of 4MHz
FJP13009H2TU Applications
There are a lot of ON Semiconductor
FJP13009H2TU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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