FJP13009H2
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- Mfr.Part #
- FJP13009H2
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN 400V 12A TO220-3
- Stock
- 12,651
- In Stock ：
- 12,651
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Factory Lead Time :
- 8 Weeks
- Collector Emitter Breakdown Voltage :
- 400V
- Mounting Type :
- Through Hole
- Transistor Type :
- NPN
- Terminal Finish :
- Tin (Sn)
- Weight :
- 1.8g
- Operating Temperature :
- 150°C TJ
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 15 @ 5A 5V
- Packaging :
- Tube
- Collector Emitter Voltage (VCEO) :
- 400V
- Lead Free :
- Lead Free
- Width :
- 4.5mm
- ECCN Code :
- EAR99
- Number of Pins :
- 3
- Gain Bandwidth Product :
- 4MHz
- Published :
- 2017
- RoHS Status :
- ROHS3 Compliant
- JEDEC-95 Code :
- TO-220AB
- Frequency :
- 4MHz
- Max Collector Current :
- 12A
- Collector Emitter Saturation Voltage :
- 1V
- Polarity/Channel Type :
- NPN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mount :
- Through Hole
- REACH SVHC :
- No SVHC
- Number of Terminations :
- 3
- hFE Min :
- 6
- Base Part Number :
- FJP13009
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Transistor Element Material :
- SILICON
- Element Configuration :
- Single
- JESD-609 Code :
- e3
- Length :
- 9.9mm
- Package / Case :
- TO-220-3
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 3A, 12A
- Pbfree Code :
- yes
- Emitter Base Voltage (VEBO) :
- 9V
- Collector Base Voltage (VCBO) :
- 700V
- Height :
- 9.2mm
- Max Power Dissipation :
- 100W
- Power Dissipation :
- 100W
- Transition Frequency :
- 4MHz
- Number of Elements :
- 1
- Transistor Application :
- SWITCHING
- Radiation Hardening :
- No
- Voltage - Rated DC :
- 400V
- Current Rating :
- 12A
- Datasheets
- FJP13009H2
FJP13009H2 Documents
NPN 150°C TJ 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole
FJP13009H2TU Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 15 @ 5A 5V.With a collector emitter saturation voltage of 1V, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 3V @ 3A, 12A.If the emitter base voltage is kept at 9V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 12A.A transition frequency of 4MHz is present in the part.Collector current can be as low as 12A volts at its maximum.
FJP13009H2TU Features
the DC current gain for this device is 15 @ 5A 5V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 3V @ 3A, 12A
the emitter base voltage is kept at 9V
the current rating of this device is 12A
a transition frequency of 4MHz
FJP13009H2TU Applications
There are a lot of ON Semiconductor
FJP13009H2TU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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