FJP13007H2TU

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Published :

2011

Number of Elements :

1

Pbfree Code :

yes

Factory Lead Time :

5 Weeks

Operating Temperature :

150°C TJ

Lead Free :

Lead Free

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

ECCN Code :

EAR99

Frequency :

4MHz

Base Part Number :

FJP13007

Voltage - Rated DC :

400V

JEDEC-95 Code :

TO-220AB

Gain Bandwidth Product :

4MHz

Collector Emitter Breakdown Voltage :

400V

Power Dissipation :

80W

Qualification Status :

Not Qualified

Transistor Type :

NPN

Element Configuration :

Single

Transition Frequency :

4MHz

Packaging :

Tube

Weight :

1.8g

Transistor Element Material :

SILICON

Emitter Base Voltage (VEBO) :

9V

Max Power Dissipation :

80W

DC Current Gain (hFE) (Min) @ Ic, Vce :

26 @ 2A 5V

Polarity/Channel Type :

NPN

Package / Case :

TO-220-3

Number of Pins :

3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

3

Mounting Type :

Through Hole

hFE Min :

5

Transistor Application :

SWITCHING

Terminal Finish :

Tin (Sn)

JESD-609 Code :

e3

Max Collector Current :

8A

RoHS Status :

ROHS3 Compliant

Mount :

Through Hole

Current Rating :

8A

Vce Saturation (Max) @ Ib, Ic :

3V @ 2A, 8A

Collector Emitter Voltage (VCEO) :

400V

Collector Emitter Saturation Voltage :

1V

Collector Base Voltage (VCBO) :

700V