FJP13007TU

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Max Collector Current :

8A

Frequency :

4MHz

Element Configuration :

Single

Base Part Number :

FJP13007

Power Dissipation :

80W

Published :

2011

Transition Frequency :

4MHz

JEDEC-95 Code :

TO-220AB

Transistor Application :

SWITCHING

Vce Saturation (Max) @ Ib, Ic :

3V @ 2A, 8A

Terminal Finish :

Tin (Sn)

Radiation Hardening :

No

Number of Terminations :

3

Gain Bandwidth Product :

4MHz

Number of Elements :

1

Number of Pins :

3

Current Rating :

8A

DC Current Gain (hFE) (Min) @ Ic, Vce :

5 @ 5A 5V

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 1 week ago)

ECCN Code :

EAR99

hFE Min :

5

Polarity/Channel Type :

NPN

Voltage - Rated DC :

400V

Operating Temperature :

150°C TJ

Lead Free :

Lead Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Length :

10.67mm

Height :

9.4mm

Collector Base Voltage (VCBO) :

700V

Mount :

Through Hole

Collector Emitter Voltage (VCEO) :

400V

Package / Case :

TO-220-3

Transistor Type :

NPN

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Width :

4.83mm

Factory Lead Time :

15 Weeks

Packaging :

Tube

REACH SVHC :

No SVHC

Emitter Base Voltage (VEBO) :

9V

JESD-609 Code :

e3

Weight :

1.8g

Pbfree Code :

yes

Max Power Dissipation :

80W

Mounting Type :

Through Hole

Collector Emitter Saturation Voltage :

1V

Collector Emitter Breakdown Voltage :

400V