FJP13007H1TU

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Mfr.Part #
FJP13007H1TU
Manufacturer
onsemi
Package / Case
TO-220-3
Datasheet
Download
Description
TRANS NPN 400V 8A TO220-3
Stock
43,319
In Stock :
43,319

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Max Power Dissipation :
80W
Transistor Type :
NPN
Power Dissipation :
80W
Emitter Base Voltage (VEBO) :
9V
Number of Elements :
1
JEDEC-95 Code :
TO-220AB
Mounting Type :
Through Hole
Vce Saturation (Max) @ Ib, Ic :
3V @ 2A, 8A
Transition Frequency :
4MHz
Max Collector Current :
8A
Radiation Hardening :
No
Factory Lead Time :
15 Weeks
Collector Emitter Saturation Voltage :
1V
Terminal Finish :
Tin (Sn)
Number of Pins :
3
hFE Min :
5
Number of Terminations :
3
Polarity/Channel Type :
NPN
Frequency :
4MHz
Packaging :
Tube
RoHS Status :
RoHS Compliant
Voltage - Rated DC :
400V
Pbfree Code :
yes
DC Current Gain (hFE) (Min) @ Ic, Vce :
15 @ 2A 5V
Mount :
Through Hole
Collector Base Voltage (VCBO) :
700V
Base Part Number :
FJP13007
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Weight :
1.214g
Element Configuration :
Single
Current Rating :
8A
Transistor Element Material :
SILICON
Package / Case :
TO-220-3
ECCN Code :
EAR99
JESD-609 Code :
e3
Collector Emitter Breakdown Voltage :
400V
Transistor Application :
SWITCHING
Gain Bandwidth Product :
4MHz
Published :
2011
Lead Free :
Lead Free
Operating Temperature :
150°C TJ
Collector Emitter Voltage (VCEO) :
400V
Datasheets
FJP13007H1TU
Introducing Transistors - Bipolar (BJT) - Single onsemi FJP13007H1TU from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Number of Pins:3, Number of Terminations:3, Base Part Number:FJP13007, Package / Case:TO-220-3, Operating Temperature:150°C TJ, FJP13007H1TU pinout, FJP13007H1TU datasheet PDF, FJP13007H1TU amp .Beyond Transistors - Bipolar (BJT) - Single onsemi FJP13007H1TU ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FJP13007H1TU


NPN 150°C TJ 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole

FJP13007H1TU Overview


DC current gain in this device equals 15 @ 2A 5V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 1V, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 3V @ 2A, 8A.An emitter's base voltage can be kept at 9V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 8A current rating.As a result, the part has a transition frequency of 4MHz.In extreme cases, the collector current can be as low as 8A volts.

FJP13007H1TU Features


the DC current gain for this device is 15 @ 2A 5V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 3V @ 2A, 8A
the emitter base voltage is kept at 9V
the current rating of this device is 8A
a transition frequency of 4MHz


FJP13007H1TU Applications


There are a lot of ON Semiconductor
FJP13007H1TU applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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