FDS9958

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Current - Continuous Drain (Id) @ 25°C :

2.9A

Max Power Dissipation :

900mW

Vgs(th) (Max) @ Id :

3V @ 250µA

Threshold Voltage :

-1.6V

Contact Plating :

Tin

Series :

PowerTrench®

Width :

3.9mm

Pbfree Code :

yes

Rise Time :

3ns

ECCN Code :

EAR99

Length :

4.9mm

Input Capacitance (Ciss) (Max) @ Vds :

1020pF @ 30V

Transistor Application :

SWITCHING

Height :

1.575mm

Weight :

187mg

Turn-Off Delay Time :

27 ns

FET Type :

2 P-Channel (Dual)

Lifecycle Status :

ACTIVE (Last Updated: 6 hours ago)

JESD-609 Code :

e3

Lead Free :

Lead Free

Turn On Delay Time :

6 ns

Published :

2006

Number of Pins :

8

Transistor Element Material :

SILICON

Terminal Form :

Gull wing

Mount :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

Drain to Source Breakdown Voltage :

-60V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Elements :

2

REACH SVHC :

No SVHC

Continuous Drain Current (ID) :

-2.9A

Number of Terminations :

8

Power Dissipation :

2W

Resistance :

105mOhm

FET Feature :

Logic Level Gate

Factory Lead Time :

11 Weeks

Element Configuration :

Dual

Feedback Cap-Max (Crss) :

65 pF

Fall Time (Typ) :

6 ns

Operating Mode :

ENHANCEMENT MODE

Drain to Source Voltage (Vdss) :

60V

Rds On (Max) @ Id, Vgs :

105m Ω @ 2.9A, 10V

Gate to Source Voltage (Vgs) :

20V

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

23nC @ 10V