FDS9435A
- Mfr.Part #
- FDS9435A
- Manufacturer
- onsemi
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET P-CH 30V 5.3A 8SOIC
- Stock
- 4,515
- In Stock :
- 4,515
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Published :
- 2001
- Length :
- 5mm
- Lead Free :
- Lead Free
- Number of Channels :
- 1
- Current Rating :
- -5.3A
- Mounting Type :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- Nominal Vgs :
- -1.7 V
- Power Dissipation-Max :
- 2.5W Ta
- Terminal Form :
- Gull wing
- Radiation Hardening :
- No
- Gate to Source Voltage (Vgs) :
- 25V
- Threshold Voltage :
- -1.7V
- RoHS Status :
- ROHS3 Compliant
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Contact Plating :
- Tin
- FET Type :
- P-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 14nC @ 10V
- Vgs (Max) :
- ±25V
- Terminal Finish :
- Nickel/Palladium/Gold (Ni/Pd/Au)
- Height :
- 1.75mm
- REACH SVHC :
- No SVHC
- Current - Continuous Drain (Id) @ 25°C :
- 5.3A Ta
- Lifecycle Status :
- ACTIVE (Last Updated: 2 hours ago)
- Operating Mode :
- ENHANCEMENT MODE
- Rise Time :
- 13ns
- Power Dissipation :
- 2.5W
- Element Configuration :
- Single
- Transistor Element Material :
- SILICON
- Series :
- PowerTrench®
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Dual Supply Voltage :
- -30V
- Rds On (Max) @ Id, Vgs :
- 50m Ω @ 5.3A, 10V
- Number of Pins :
- 8
- Drain to Source Voltage (Vdss) :
- 30V
- Voltage - Rated DC :
- -30V
- ECCN Code :
- EAR99
- Continuous Drain Current (ID) :
- -5.3A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain to Source Breakdown Voltage :
- -30V
- Drain-source On Resistance-Max :
- 0.05Ohm
- Operating Temperature :
- -55°C~175°C TJ
- Turn On Delay Time :
- 7 ns
- Weight :
- 130mg
- Pbfree Code :
- yes
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- JESD-609 Code :
- e4
- Factory Lead Time :
- 18 Weeks
- Termination :
- SMD/SMT
- Input Capacitance (Ciss) (Max) @ Vds :
- 528pF @ 15V
- Max Junction Temperature (Tj) :
- 175°C
- Terminal Position :
- Dual
- Transistor Application :
- SWITCHING
- Fall Time (Typ) :
- 9 ns
- Number of Terminations :
- 8
- Turn-Off Delay Time :
- 14 ns
- Number of Elements :
- 1
- Mount :
- Surface Mount
- Width :
- 4mm
- Datasheets
- FDS9435A

P-Channel Tape & Reel (TR) 50m Ω @ 5.3A, 10V ±25V 528pF @ 15V 14nC @ 10V 30V 8-SOIC (0.154, 3.90mm Width)
The FQB1P50TM P-Channel enhancement mode power MOSFET is produced using proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. The device is suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
FQB1P50TM Features
Low Gate Charge (Typ. 11 nC)
Low Crss (Typ. 6.0 pF)
100% Avalanche Tested
RoHS Compliant
Lead Free
Vgs(th) (Max) @ Id: 5V @ 250 μA
FQB1P50TM Applications
Switch electronic signals
Oscillators
Modulators
Detectors
New Energy Vehicle
Photovoltaic Generation
Wind Power Generation
Smart Grid
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