FDS9926A
- Mfr.Part #
- FDS9926A
- Manufacturer
- onsemi
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET 2N-CH 20V 6.5A 8SOIC
- Stock
- 3
- In Stock :
- 3
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- RoHS Status :
- ROHS3 Compliant
- Power - Max :
- 900mW
- Mount :
- Surface Mount
- Transistor Element Material :
- SILICON
- Drain-source On Resistance-Max :
- 0.03Ohm
- Operating Temperature :
- -55°C~150°C TJ
- Weight :
- 187mg
- Terminal Finish :
- Tin (Sn)
- Dual Supply Voltage :
- 20V
- Transistor Application :
- SWITCHING
- Number of Terminations :
- 8
- Operating Mode :
- ENHANCEMENT MODE
- Termination :
- SMD/SMT
- Length :
- 5mm
- Gate Charge (Qg) (Max) @ Vgs :
- 9nC @ 4.5V
- Radiation Hardening :
- No
- Threshold Voltage :
- 1V
- Packaging :
- Tape and Reel (TR)
- Rds On (Max) @ Id, Vgs :
- 30m Ω @ 6.5A, 4.5V
- Published :
- 2003
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Lead Free :
- Lead Free
- Vgs(th) (Max) @ Id :
- 1.5V @ 250µA
- Gate to Source Voltage (Vgs) :
- 10V
- Drain to Source Breakdown Voltage :
- 20V
- Factory Lead Time :
- 10 Weeks
- Mounting Type :
- Surface Mount
- Nominal Vgs :
- 1 V
- Terminal Form :
- Gull wing
- Number of Elements :
- 2
- Continuous Drain Current (ID) :
- 6.5A
- Voltage - Rated DC :
- 20V
- FET Type :
- 2 N-Channel (Dual)
- FET Feature :
- Logic Level Gate
- Series :
- PowerTrench®
- ECCN Code :
- EAR99
- Element Configuration :
- Dual
- REACH SVHC :
- No SVHC
- Input Capacitance (Ciss) (Max) @ Vds :
- 650pF @ 10V
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Fall Time (Typ) :
- 4 ns
- Pbfree Code :
- yes
- JESD-609 Code :
- e3
- Turn-Off Delay Time :
- 15 ns
- Number of Pins :
- 8
- Rise Time :
- 9ns
- Height :
- 1.5mm
- Current Rating :
- 6.5A
- Max Power Dissipation :
- 2W
- Turn On Delay Time :
- 8 ns
- Width :
- 4mm
- Power Dissipation :
- 2W
- Datasheets
- FDS9926A

FDS9926A datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at
FDS9926A Description
These N-channel 2.5V designated MOSFET use advanced power trench technology. It is optimized for power management applications with a wide range of gate drive voltages (2.5V-10V).
FDS9926A Features
6.5 A, 20 V
RDS(ON) = 30 mΩ @ VGS = 4.5 V
RDS(ON) = 43 mΩ @ VGS = 2.5 V
Optimized for use in battery protection circuits
±10 VGSS allows for wide operating voltage range
Low gate charge
FDS9926A Applications
This product is general usage and suitable for many different applications.
Battery Protection
Load Switch
Power Management
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