FDS9926A

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Published :

2003

Current Rating :

6.5A

Weight :

187mg

Threshold Voltage :

1V

Termination :

SMD/SMT

Fall Time (Typ) :

4 ns

Length :

5mm

Turn On Delay Time :

8 ns

Input Capacitance (Ciss) (Max) @ Vds :

650pF @ 10V

FET Type :

2 N-Channel (Dual)

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Power Dissipation :

2W

FET Feature :

Logic Level Gate

Lead Free :

Lead Free

Rds On (Max) @ Id, Vgs :

30m Ω @ 6.5A, 4.5V

Mounting Type :

Surface Mount

Terminal Finish :

Tin (Sn)

Turn-Off Delay Time :

15 ns

Pbfree Code :

yes

Transistor Element Material :

SILICON

Number of Elements :

2

ECCN Code :

EAR99

Gate to Source Voltage (Vgs) :

10V

Operating Temperature :

-55°C~150°C TJ

Voltage - Rated DC :

20V

Height :

1.5mm

Number of Terminations :

8

RoHS Status :

ROHS3 Compliant

Packaging :

Tape and Reel (TR)

Drain-source On Resistance-Max :

0.03Ohm

Width :

4mm

JESD-609 Code :

e3

Drain to Source Breakdown Voltage :

20V

Mount :

Surface Mount

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Rise Time :

9ns

Factory Lead Time :

10 Weeks

Series :

PowerTrench®

Transistor Application :

SWITCHING

Power - Max :

900mW

REACH SVHC :

No SVHC

Number of Pins :

8

Gate Charge (Qg) (Max) @ Vgs :

9nC @ 4.5V

Nominal Vgs :

1 V

Element Configuration :

Dual

Max Power Dissipation :

2W

Dual Supply Voltage :

20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Terminal Form :

Gull wing

Radiation Hardening :

No

Operating Mode :

ENHANCEMENT MODE

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Continuous Drain Current (ID) :

6.5A