FDS9926A

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

RoHS Status :

ROHS3 Compliant

Power - Max :

900mW

Mount :

Surface Mount

Transistor Element Material :

SILICON

Drain-source On Resistance-Max :

0.03Ohm

Operating Temperature :

-55°C~150°C TJ

Weight :

187mg

Terminal Finish :

Tin (Sn)

Dual Supply Voltage :

20V

Transistor Application :

SWITCHING

Number of Terminations :

8

Operating Mode :

ENHANCEMENT MODE

Termination :

SMD/SMT

Length :

5mm

Gate Charge (Qg) (Max) @ Vgs :

9nC @ 4.5V

Radiation Hardening :

No

Threshold Voltage :

1V

Packaging :

Tape and Reel (TR)

Rds On (Max) @ Id, Vgs :

30m Ω @ 6.5A, 4.5V

Published :

2003

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Lead Free :

Lead Free

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Gate to Source Voltage (Vgs) :

10V

Drain to Source Breakdown Voltage :

20V

Factory Lead Time :

10 Weeks

Mounting Type :

Surface Mount

Nominal Vgs :

1 V

Terminal Form :

Gull wing

Number of Elements :

2

Continuous Drain Current (ID) :

6.5A

Voltage - Rated DC :

20V

FET Type :

2 N-Channel (Dual)

FET Feature :

Logic Level Gate

Series :

PowerTrench®

ECCN Code :

EAR99

Element Configuration :

Dual

REACH SVHC :

No SVHC

Input Capacitance (Ciss) (Max) @ Vds :

650pF @ 10V

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Fall Time (Typ) :

4 ns

Pbfree Code :

yes

JESD-609 Code :

e3

Turn-Off Delay Time :

15 ns

Number of Pins :

8

Rise Time :

9ns

Height :

1.5mm

Current Rating :

6.5A

Max Power Dissipation :

2W

Turn On Delay Time :

8 ns

Width :

4mm

Power Dissipation :

2W