FDS9435A
- Mfr.Part #
- FDS9435A
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- SMALL SIGNAL FIELD-EFFECT TRANSI
- Stock
- 4,515
- In Stock :
- 4,515
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Published :
- 2001
- Drain-source On Resistance-Max :
- 0.05Ohm
- Nominal Vgs :
- -1.7 V
- Lead Free :
- Lead Free
- Operating Temperature :
- -55°C~175°C TJ
- Contact Plating :
- Tin
- Dual Supply Voltage :
- -30V
- Number of Channels :
- 1
- Turn-Off Delay Time :
- 14 ns
- JESD-609 Code :
- e4
- Number of Elements :
- 1
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Voltage - Rated DC :
- -30V
- Continuous Drain Current (ID) :
- -5.3A
- Max Junction Temperature (Tj) :
- 175°C
- Length :
- 5mm
- Transistor Application :
- SWITCHING
- Pbfree Code :
- yes
- Number of Terminations :
- 8
- Rise Time :
- 13ns
- Drain to Source Voltage (Vdss) :
- 30V
- Operating Mode :
- ENHANCEMENT MODE
- Transistor Element Material :
- SILICON
- Current - Continuous Drain (Id) @ 25°C :
- 5.3A Ta
- Terminal Form :
- Gull wing
- FET Type :
- P-Channel
- Radiation Hardening :
- No
- Fall Time (Typ) :
- 9 ns
- Current Rating :
- -5.3A
- Number of Pins :
- 8
- Threshold Voltage :
- -1.7V
- Power Dissipation-Max :
- 2.5W Ta
- Vgs (Max) :
- ±25V
- ECCN Code :
- EAR99
- Termination :
- SMD/SMT
- Width :
- 4mm
- Gate Charge (Qg) (Max) @ Vgs :
- 14nC @ 10V
- Factory Lead Time :
- 18 Weeks
- Packaging :
- Tape and Reel (TR)
- REACH SVHC :
- No SVHC
- Terminal Position :
- Dual
- Element Configuration :
- Single
- Power Dissipation :
- 2.5W
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Input Capacitance (Ciss) (Max) @ Vds :
- 528pF @ 15V
- Height :
- 1.75mm
- Mounting Type :
- Surface Mount
- Terminal Finish :
- Nickel/Palladium/Gold (Ni/Pd/Au)
- Series :
- PowerTrench®
- Gate to Source Voltage (Vgs) :
- 25V
- Lifecycle Status :
- ACTIVE (Last Updated: 2 hours ago)
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Turn On Delay Time :
- 7 ns
- RoHS Status :
- ROHS3 Compliant
- Rds On (Max) @ Id, Vgs :
- 50m Ω @ 5.3A, 10V
- Drain to Source Breakdown Voltage :
- -30V
- Mount :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Weight :
- 130mg
- Datasheets
- FDS9435A

P-Channel Tape & Reel (TR) 50m Ω @ 5.3A, 10V ±25V 528pF @ 15V 14nC @ 10V 30V 8-SOIC (0.154, 3.90mm Width)
The FQB1P50TM P-Channel enhancement mode power MOSFET is produced using proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. The device is suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
FQB1P50TM Features
Low Gate Charge (Typ. 11 nC)
Low Crss (Typ. 6.0 pF)
100% Avalanche Tested
RoHS Compliant
Lead Free
Vgs(th) (Max) @ Id: 5V @ 250 μA
FQB1P50TM Applications
Switch electronic signals
Oscillators
Modulators
Detectors
New Energy Vehicle
Photovoltaic Generation
Wind Power Generation
Smart Grid
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