FDS9435A
- Mfr.Part #
- FDS9435A
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- SMALL SIGNAL FIELD-EFFECT TRANSI
- Stock
- 4,515
- In Stock :
- 4,515
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Continuous Drain Current (ID) :
- -5.3A
- Terminal Form :
- Gull wing
- Pbfree Code :
- yes
- Weight :
- 130mg
- Nominal Vgs :
- -1.7 V
- Terminal Position :
- Dual
- Termination :
- SMD/SMT
- Transistor Application :
- SWITCHING
- FET Type :
- P-Channel
- Max Junction Temperature (Tj) :
- 175°C
- RoHS Status :
- ROHS3 Compliant
- Number of Elements :
- 1
- Fall Time (Typ) :
- 9 ns
- Dual Supply Voltage :
- -30V
- Radiation Hardening :
- No
- REACH SVHC :
- No SVHC
- Height :
- 1.75mm
- Power Dissipation :
- 2.5W
- Published :
- 2001
- Operating Temperature :
- -55°C~175°C TJ
- Gate Charge (Qg) (Max) @ Vgs :
- 14nC @ 10V
- Current - Continuous Drain (Id) @ 25°C :
- 5.3A Ta
- Width :
- 4mm
- Drain-source On Resistance-Max :
- 0.05Ohm
- Turn-Off Delay Time :
- 14 ns
- Voltage - Rated DC :
- -30V
- Series :
- PowerTrench®
- Element Configuration :
- Single
- Number of Pins :
- 8
- Current Rating :
- -5.3A
- Operating Mode :
- ENHANCEMENT MODE
- Rise Time :
- 13ns
- Mounting Type :
- Surface Mount
- Transistor Element Material :
- SILICON
- Length :
- 5mm
- Drain to Source Breakdown Voltage :
- -30V
- Gate to Source Voltage (Vgs) :
- 25V
- JESD-609 Code :
- e4
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Channels :
- 1
- Contact Plating :
- Tin
- Factory Lead Time :
- 18 Weeks
- Mount :
- Surface Mount
- Threshold Voltage :
- -1.7V
- Number of Terminations :
- 8
- Rds On (Max) @ Id, Vgs :
- 50m Ω @ 5.3A, 10V
- Turn On Delay Time :
- 7 ns
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- ECCN Code :
- EAR99
- Input Capacitance (Ciss) (Max) @ Vds :
- 528pF @ 15V
- Vgs (Max) :
- ±25V
- Lead Free :
- Lead Free
- Power Dissipation-Max :
- 2.5W Ta
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Lifecycle Status :
- ACTIVE (Last Updated: 2 hours ago)
- Drain to Source Voltage (Vdss) :
- 30V
- Terminal Finish :
- Nickel/Palladium/Gold (Ni/Pd/Au)
- Packaging :
- Tape and Reel (TR)
- Datasheets
- FDS9435A

P-Channel Tape & Reel (TR) 50m Ω @ 5.3A, 10V ±25V 528pF @ 15V 14nC @ 10V 30V 8-SOIC (0.154, 3.90mm Width)
The FQB1P50TM P-Channel enhancement mode power MOSFET is produced using proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. The device is suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
FQB1P50TM Features
Low Gate Charge (Typ. 11 nC)
Low Crss (Typ. 6.0 pF)
100% Avalanche Tested
RoHS Compliant
Lead Free
Vgs(th) (Max) @ Id: 5V @ 250 μA
FQB1P50TM Applications
Switch electronic signals
Oscillators
Modulators
Detectors
New Energy Vehicle
Photovoltaic Generation
Wind Power Generation
Smart Grid
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