FDS9435A
- Mfr.Part #
- FDS9435A
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- SMALL SIGNAL FIELD-EFFECT TRANSI
- Stock
- 4,515
- In Stock :
- 4,515
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Terminations :
- 8
- Turn-Off Delay Time :
- 14 ns
- Pbfree Code :
- yes
- Transistor Element Material :
- SILICON
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Max Junction Temperature (Tj) :
- 175°C
- Contact Plating :
- Tin
- Input Capacitance (Ciss) (Max) @ Vds :
- 528pF @ 15V
- Current - Continuous Drain (Id) @ 25°C :
- 5.3A Ta
- Power Dissipation-Max :
- 2.5W Ta
- Rise Time :
- 13ns
- Packaging :
- Tape and Reel (TR)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-609 Code :
- e4
- Element Configuration :
- Single
- Continuous Drain Current (ID) :
- -5.3A
- Operating Temperature :
- -55°C~175°C TJ
- Number of Pins :
- 8
- Terminal Form :
- Gull wing
- REACH SVHC :
- No SVHC
- RoHS Status :
- ROHS3 Compliant
- ECCN Code :
- EAR99
- Lead Free :
- Lead Free
- Current Rating :
- -5.3A
- Rds On (Max) @ Id, Vgs :
- 50m Ω @ 5.3A, 10V
- Terminal Position :
- Dual
- Series :
- PowerTrench®
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Lifecycle Status :
- ACTIVE (Last Updated: 2 hours ago)
- Operating Mode :
- ENHANCEMENT MODE
- Nominal Vgs :
- -1.7 V
- Weight :
- 130mg
- Gate Charge (Qg) (Max) @ Vgs :
- 14nC @ 10V
- Dual Supply Voltage :
- -30V
- Terminal Finish :
- Nickel/Palladium/Gold (Ni/Pd/Au)
- FET Type :
- P-Channel
- Number of Channels :
- 1
- Length :
- 5mm
- Width :
- 4mm
- Height :
- 1.75mm
- Factory Lead Time :
- 18 Weeks
- Published :
- 2001
- Drain-source On Resistance-Max :
- 0.05Ohm
- Turn On Delay Time :
- 7 ns
- Transistor Application :
- SWITCHING
- Radiation Hardening :
- No
- Vgs (Max) :
- ±25V
- Gate to Source Voltage (Vgs) :
- 25V
- Number of Elements :
- 1
- Drain to Source Voltage (Vdss) :
- 30V
- Power Dissipation :
- 2.5W
- Drain to Source Breakdown Voltage :
- -30V
- Voltage - Rated DC :
- -30V
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Termination :
- SMD/SMT
- Fall Time (Typ) :
- 9 ns
- Threshold Voltage :
- -1.7V
- Mounting Type :
- Surface Mount
- Mount :
- Surface Mount
- Datasheets
- FDS9435A

P-Channel Tape & Reel (TR) 50m Ω @ 5.3A, 10V ±25V 528pF @ 15V 14nC @ 10V 30V 8-SOIC (0.154, 3.90mm Width)
The FQB1P50TM P-Channel enhancement mode power MOSFET is produced using proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. The device is suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
FQB1P50TM Features
Low Gate Charge (Typ. 11 nC)
Low Crss (Typ. 6.0 pF)
100% Avalanche Tested
RoHS Compliant
Lead Free
Vgs(th) (Max) @ Id: 5V @ 250 μA
FQB1P50TM Applications
Switch electronic signals
Oscillators
Modulators
Detectors
New Energy Vehicle
Photovoltaic Generation
Wind Power Generation
Smart Grid
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