FDS9953A
- Mfr.Part #
- FDS9953A
- Manufacturer
- onsemi
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET 2P-CH 30V 2.9A 8SOIC
- Stock
- 31,680
- In Stock :
- 31,680
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Pbfree Code :
- yes
- Resistance :
- 130mOhm
- FET Feature :
- Logic Level Gate
- Mount :
- Surface Mount
- Factory Lead Time :
- 10 Weeks
- Mounting Type :
- Surface Mount
- FET Type :
- 2 P-Channel (Dual)
- REACH SVHC :
- No SVHC
- Number of Pins :
- 8
- Pulsed Drain Current-Max (IDM) :
- 10A
- Power Dissipation :
- 2W
- Transistor Element Material :
- SILICON
- ECCN Code :
- EAR99
- Rise Time :
- 13ns
- Number of Elements :
- 2
- Length :
- 5mm
- Drain to Source Breakdown Voltage :
- -30V
- Continuous Drain Current (ID) :
- 2.9mA
- Gate Charge (Qg) (Max) @ Vgs :
- 3.5nC @ 10V
- Drain to Source Voltage (Vdss) :
- 30V
- Current Rating :
- -2.9A
- JESD-609 Code :
- e3
- Height :
- 1.5mm
- Packaging :
- Tape and Reel (TR)
- Power - Max :
- 900mW
- Turn On Delay Time :
- 4.5 ns
- Lead Free :
- Lead Free
- Max Power Dissipation :
- 2W
- Rds On (Max) @ Id, Vgs :
- 130m Ω @ 1A, 10V
- Terminal Finish :
- Tin (Sn)
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Gate to Source Voltage (Vgs) :
- 25V
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- RoHS Status :
- ROHS3 Compliant
- Nominal Vgs :
- 1.8 V
- Voltage - Rated DC :
- -30V
- Current - Continuous Drain (Id) @ 25°C :
- 2.9A
- Operating Temperature :
- -55°C~150°C TJ
- Radiation Hardening :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Width :
- 4mm
- Published :
- 2001
- Input Capacitance (Ciss) (Max) @ Vds :
- 185pF @ 15V
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- Threshold Voltage :
- -1.8V
- Element Configuration :
- Dual
- Weight :
- 230.4mg
- Terminal Form :
- Gull wing
- Series :
- PowerTrench®
- Operating Mode :
- ENHANCEMENT MODE
- Number of Terminations :
- 8
- Fall Time (Typ) :
- 2 ns
- Transistor Application :
- SWITCHING
- Turn-Off Delay Time :
- 11 ns
- Datasheets
- FDS9953A

FDS9953A datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at
FDS9953A Description
This P-channel MOSFET is a rugged gate version of advanced PowerTritch technology. It is optimized for power management applications that require a wide range of rated driving voltages (4.5V-25V).
FDS9953A Features
-2.9 A, -30 V
RDS(on) = 130 mΩ@ VGS = -10 V
RDS(on) = 200 mΩ @ VGS = -4.5 V
Low gate charge (2.5nC typical)
Fast switching speed
High performance trench technology for extremely low RDS(ON)
High power and current handling capability
FDS9953A Applications
This product is general usage and suitable for many different applications.
Power Management
Load Switch
Battery Protection
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