FDS9953A
- Mfr.Part #
- FDS9953A
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- POWER FIELD-EFFECT TRANSISTOR, 2
- Stock
- 42,970
- In Stock :
- 42,970
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Element Configuration :
- Dual
- Length :
- 5mm
- Max Power Dissipation :
- 2W
- Number of Elements :
- 2
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Transistor Application :
- SWITCHING
- Drain to Source Breakdown Voltage :
- -30V
- FET Type :
- 2 P-Channel (Dual)
- Factory Lead Time :
- 10 Weeks
- Power - Max :
- 900mW
- Pbfree Code :
- yes
- Nominal Vgs :
- 1.8 V
- Input Capacitance (Ciss) (Max) @ Vds :
- 185pF @ 15V
- REACH SVHC :
- No SVHC
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- JESD-609 Code :
- e3
- Terminal Finish :
- Tin (Sn)
- Radiation Hardening :
- No
- ECCN Code :
- EAR99
- Operating Mode :
- ENHANCEMENT MODE
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- Gate Charge (Qg) (Max) @ Vgs :
- 3.5nC @ 10V
- Width :
- 4mm
- Power Dissipation :
- 2W
- Turn On Delay Time :
- 4.5 ns
- Series :
- PowerTrench®
- RoHS Status :
- ROHS3 Compliant
- Gate to Source Voltage (Vgs) :
- 25V
- Mount :
- Surface Mount
- Drain to Source Voltage (Vdss) :
- 30V
- Operating Temperature :
- -55°C~150°C TJ
- Current Rating :
- -2.9A
- Lead Free :
- Lead Free
- Number of Terminations :
- 8
- Weight :
- 230.4mg
- Height :
- 1.5mm
- Pulsed Drain Current-Max (IDM) :
- 10A
- Rds On (Max) @ Id, Vgs :
- 130m Ω @ 1A, 10V
- Resistance :
- 130mOhm
- Packaging :
- Tape and Reel (TR)
- FET Feature :
- Logic Level Gate
- Number of Pins :
- 8
- Turn-Off Delay Time :
- 11 ns
- Fall Time (Typ) :
- 2 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Threshold Voltage :
- -1.8V
- Mounting Type :
- Surface Mount
- Transistor Element Material :
- SILICON
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Published :
- 2001
- Continuous Drain Current (ID) :
- 2.9mA
- Terminal Form :
- Gull wing
- Voltage - Rated DC :
- -30V
- Rise Time :
- 13ns
- Current - Continuous Drain (Id) @ 25°C :
- 2.9A
- Datasheets
- FDS9953A

FDS9953A datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at
FDS9953A Description
This P-channel MOSFET is a rugged gate version of advanced PowerTritch technology. It is optimized for power management applications that require a wide range of rated driving voltages (4.5V-25V).
FDS9953A Features
-2.9 A, -30 V
RDS(on) = 130 mΩ@ VGS = -10 V
RDS(on) = 200 mΩ @ VGS = -4.5 V
Low gate charge (2.5nC typical)
Fast switching speed
High performance trench technology for extremely low RDS(ON)
High power and current handling capability
FDS9953A Applications
This product is general usage and suitable for many different applications.
Power Management
Load Switch
Battery Protection
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