FDS9945

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Rise Time :

4.3ns

Max Power Dissipation :

2W

Published :

2001

Number of Elements :

2

Weight :

187mg

Turn-Off Delay Time :

19 ns

Mounting Type :

Surface Mount

Turn On Delay Time :

7 ns

FET Feature :

Logic Level Gate

Number of Terminations :

8

Contact Plating :

Tin

Length :

5mm

Packaging :

Tape and Reel (TR)

Mount :

Surface Mount

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Power Dissipation :

2W

ECCN Code :

EAR99

FET Type :

2 N-Channel (Dual)

Gate to Source Voltage (Vgs) :

20V

Voltage - Rated DC :

60V

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

420pF @ 30V

Number of Pins :

8

Nominal Vgs :

2.5 V

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

13nC @ 5V

Pbfree Code :

yes

Vgs(th) (Max) @ Id :

3V @ 250µA

Rds On (Max) @ Id, Vgs :

100m Ω @ 3.5A, 10V

REACH SVHC :

No SVHC

Series :

PowerTrench®

Element Configuration :

Dual

Lead Free :

Lead Free

Threshold Voltage :

2.5V

Drain to Source Breakdown Voltage :

60V

Operating Temperature :

-55°C~175°C TJ

Transistor Element Material :

SILICON

Current Rating :

3.5A

Lifecycle Status :

ACTIVE (Last Updated: 5 hours ago)

Operating Mode :

ENHANCEMENT MODE

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Resistance :

100MOhm

Factory Lead Time :

21 Weeks

Continuous Drain Current (ID) :

3.5A

Power - Max :

1W

Width :

4mm

Terminal Form :

Gull wing

Radiation Hardening :

No

Height :

1.5mm

Fall Time (Typ) :

3 ns