FDS9934C

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

REACH SVHC :

No SVHC

Height :

1.575mm

Gate Charge (Qg) (Max) @ Vgs :

9nC @ 4.5V

Mounting Type :

Surface Mount

ECCN Code :

EAR99

Operating Temperature :

-55°C~150°C TJ

Power Dissipation :

2W

Weight :

187mg

Number of Pins :

8

Number of Elements :

2

FET Feature :

Logic Level Gate

Packaging :

Tape and Reel (TR)

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

30m Ω @ 6.5A, 4.5V

Number of Terminations :

8

Radiation Hardening :

No

Terminal Finish :

Tin (Sn)

Drain to Source Breakdown Voltage :

20V

Termination :

SMD/SMT

Input Capacitance (Ciss) (Max) @ Vds :

650pF @ 10V

Lifecycle Status :

ACTIVE (Last Updated: 5 hours ago)

Mount :

Surface Mount

Transistor Application :

SWITCHING

Dual Supply Voltage :

20V

JESD-609 Code :

e3

Nominal Vgs :

1 V

Rise Time :

9ns

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Turn On Delay Time :

16 ns

Max Power Dissipation :

2W

Fall Time (Typ) :

9 ns

Turn-Off Delay Time :

25 ns

Gate to Source Voltage (Vgs) :

12V

Width :

3.9mm

Transistor Element Material :

SILICON

Pbfree Code :

yes

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Factory Lead Time :

18 Weeks

Terminal Form :

Gull wing

Current Rating :

6.5A

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Current - Continuous Drain (Id) @ 25°C :

6.5A 5A

FET Type :

N and P-Channel

RoHS Status :

ROHS3 Compliant

Terminal Position :

Dual

Resistance :

30mOhm

Length :

4.9mm

Lead Free :

Lead Free

Power - Max :

900mW

Continuous Drain Current (ID) :

6.5A

Published :

2004

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Threshold Voltage :

1V