FDS9934C
- Mfr.Part #
- FDS9934C
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- POWER FIELD-EFFECT TRANSISTOR, 6
- Stock
- 13,018
- In Stock :
- 13,018
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Current - Continuous Drain (Id) @ 25°C :
- 6.5A 5A
- Packaging :
- Tape and Reel (TR)
- Weight :
- 187mg
- Power Dissipation :
- 2W
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Published :
- 2004
- Rise Time :
- 9ns
- JESD-609 Code :
- e3
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Power - Max :
- 900mW
- RoHS Status :
- ROHS3 Compliant
- Turn On Delay Time :
- 16 ns
- Terminal Finish :
- Tin (Sn)
- Vgs(th) (Max) @ Id :
- 1.5V @ 250µA
- Number of Elements :
- 2
- Factory Lead Time :
- 18 Weeks
- Number of Terminations :
- 8
- Drain to Source Breakdown Voltage :
- 20V
- Threshold Voltage :
- 1V
- Number of Pins :
- 8
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Surface Mount
- Dual Supply Voltage :
- 20V
- Length :
- 4.9mm
- Transistor Element Material :
- SILICON
- Terminal Form :
- Gull wing
- Continuous Drain Current (ID) :
- 6.5A
- ECCN Code :
- EAR99
- Operating Mode :
- ENHANCEMENT MODE
- Termination :
- SMD/SMT
- Input Capacitance (Ciss) (Max) @ Vds :
- 650pF @ 10V
- Lead Free :
- Lead Free
- Pbfree Code :
- yes
- Height :
- 1.575mm
- Terminal Position :
- Dual
- FET Feature :
- Logic Level Gate
- Fall Time (Typ) :
- 9 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 9nC @ 4.5V
- Lifecycle Status :
- ACTIVE (Last Updated: 5 hours ago)
- Radiation Hardening :
- No
- Turn-Off Delay Time :
- 25 ns
- Mount :
- Surface Mount
- Polarity/Channel Type :
- N-CHANNEL AND P-CHANNEL
- Operating Temperature :
- -55°C~150°C TJ
- REACH SVHC :
- No SVHC
- Nominal Vgs :
- 1 V
- Transistor Application :
- SWITCHING
- Rds On (Max) @ Id, Vgs :
- 30m Ω @ 6.5A, 4.5V
- FET Type :
- N and P-Channel
- Max Power Dissipation :
- 2W
- Current Rating :
- 6.5A
- Gate to Source Voltage (Vgs) :
- 12V
- Resistance :
- 30mOhm
- Width :
- 3.9mm
- Datasheets
- FDS9934C
FDS9934C Documents

FDS9934C datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at
FDS9934C Description
These dual N-channel and P-channel enhanced mode power field effect transistors are produced using an advanced PowerTritch process that is customized to minimize on-resistance while maintaining excellent switching performance. These devices are ideal for low-voltage and battery-powered applications that require low series power consumption and fast switching.
FDS9934C Features
Q1: N-Channel
6.5 A, 20 V
RDS(ON) = 30 mΩ @ VGS = 4.5 V
RDS(ON) = 43 mΩ @ VGS = 2.5 V
Q2: P-Channel
-5 A, -20 V
RDS(ON) = 55 mΩ @ VGS = -4.5 V
RDS(ON) = 90 mΩ @ VGS = -2.5 V
FDS9934C Applications
This product is general usage and suitable for many different applications.
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