FDP2670
- Mfr.Part #
- FDP2670
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 200V 19A TO220-3
- Stock
- 36,906
- In Stock :
- 36,906
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Reach Compliance Code :
- Unknown
- Operating Mode :
- ENHANCEMENT MODE
- Drain to Source Voltage (Vdss) :
- 200V
- JEDEC-95 Code :
- TO-220AB
- Drain Current-Max (Abs) (ID) :
- 19A
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Transistor Element Material :
- SILICON
- Avalanche Energy Rating (Eas) :
- 375 mJ
- Number of Terminations :
- 3
- Series :
- PowerTrench®
- Operating Temperature :
- -65°C~175°C TJ
- Rds On (Max) @ Id, Vgs :
- 130m Ω @ 10A, 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Qualification Status :
- COMMERCIAL
- JESD-30 Code :
- R-PSFM-T3
- Packaging :
- Tube
- Current - Continuous Drain (Id) @ 25°C :
- 19A Ta
- Surface Mount :
- No
- Terminal Position :
- Single
- Vgs(th) (Max) @ Id :
- 4.5V @ 250μA
- Package / Case :
- TO-220-3
- FET Type :
- N-Channel
- Number of Elements :
- 1
- Time@Peak Reflow Temperature-Max (s) :
- Not Applicable
- Input Capacitance (Ciss) (Max) @ Vds :
- 1.32pF @ 100V
- Peak Reflow Temperature (Cel) :
- Not Applicable
- RoHS Status :
- ROHS3 Compliant
- Gate Charge (Qg) (Max) @ Vgs :
- 38nC @ 10V
- Pbfree Code :
- yes
- Terminal Finish :
- MATTE TIN
- Transistor Application :
- SWITCHING
- Vgs (Max) :
- ±20V
- DS Breakdown Voltage-Min :
- 200V
- JESD-609 Code :
- e3
- Pulsed Drain Current-Max (IDM) :
- 40A
- Pin Count :
- 3
- Mounting Type :
- Through Hole
- Drain-source On Resistance-Max :
- 0.13Ohm
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Power Dissipation-Max :
- 93W Tc
- Datasheets
- FDP2670

N-Channel Tube 130m Ω @ 10A, 10V ±20V 1.32pF @ 100V 38nC @ 10V 200V TO-220-3
FDP2670 Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 375 mJ.A device's maximal input capacitance is 1.32pF @ 100V, which is defined as the capacitance between its input terminals with either input grounded.In this device, the drain current is 19A, which is the maximum continuous current the device can conduct.In terms of pulsed drain current, it has a maximum of 40A, which is its maximum rated peak drain current.To maintain normal operation, it is recommended that the DS breakdown voltage be above 200V.This transistor requires a 200V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
FDP2670 Features
the avalanche energy rating (Eas) is 375 mJ
based on its rated peak drain current 40A.
a 200V drain to source voltage (Vdss)
FDP2670 Applications
There are a lot of Rochester Electronics, LLC
FDP2670 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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