FDP2572
- Mfr.Part #
- FDP2572
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 150V 4A/29A TO220-3
- Stock
- 8,709
- In Stock :
- 8,709
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation :
- 135W
- Input Capacitance (Ciss) (Max) @ Vds :
- 1770pF @ 25V
- Rise Time :
- 14ns
- Case Connection :
- DRAIN
- REACH SVHC :
- No SVHC
- JESD-609 Code :
- e3
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Drain to Source Breakdown Voltage :
- 150V
- Element Configuration :
- Single
- Lead Free :
- Lead Free
- Number of Terminations :
- 3
- JEDEC-95 Code :
- TO-220AB
- Turn-Off Delay Time :
- 31 ns
- ECCN Code :
- EAR99
- Width :
- 4.83mm
- Pbfree Code :
- yes
- Operating Temperature :
- -55°C~175°C TJ
- Drain Current-Max (Abs) (ID) :
- 4A
- Fall Time (Typ) :
- 14 ns
- Threshold Voltage :
- 4V
- Drive Voltage (Max Rds On,Min Rds On) :
- 6V 10V
- Nominal Vgs :
- 4 V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Package / Case :
- TO-220-3
- Current Rating :
- 29A
- Transistor Application :
- SWITCHING
- Rds On (Max) @ Id, Vgs :
- 54m Ω @ 9A, 10V
- Turn On Delay Time :
- 11 ns
- Power Dissipation-Max :
- 135W Tc
- Mounting Type :
- Through Hole
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Continuous Drain Current (ID) :
- 29A
- Gate to Source Voltage (Vgs) :
- 20V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Factory Lead Time :
- 9 Weeks
- Transistor Element Material :
- SILICON
- Qualification Status :
- Not Qualified
- Number of Elements :
- 1
- Gate Charge (Qg) (Max) @ Vgs :
- 34nC @ 10V
- Length :
- 10.67mm
- Packaging :
- Tube
- Operating Mode :
- ENHANCEMENT MODE
- Vgs (Max) :
- ±20V
- Number of Pins :
- 3
- Published :
- 2002
- Weight :
- 1.8g
- FET Type :
- N-Channel
- Drain-source On Resistance-Max :
- 0.054Ohm
- Series :
- PowerTrench®
- Mount :
- Through Hole
- Height :
- 9.4mm
- RoHS Status :
- ROHS3 Compliant
- Voltage - Rated DC :
- 150V
- Terminal Finish :
- Tin (Sn)
- Current - Continuous Drain (Id) @ 25°C :
- 4A Ta 29A Tc
- Datasheets
- FDP2572

N-Channel Tube 54m Ω @ 9A, 10V ±20V 1770pF @ 25V 34nC @ 10V TO-220-3
FDP2572 MOSFET Description
The FDP2572 is an N-Channel MOSFET for various applications, for example, battery protection circuits. It is enclosed in the TO-220 package and has a Drain-Source voltage of 150 V, a Gate-Source voltage of ±20 V, and a Drain current (continuous) of 29 A. It features low Miller Charge and low on-resistance to obtain outstanding switching performance.
FDP2572 MOSFET Features
rDS(ON) = 45m? (Typ.), VGS = 10V, ID = 9A
Qg(tot) = 26nC (Typ.), VGS = 10V
Low Miller Charge
Low QRR Body Diode
UIS Capability (Single Pulse and Repetitive Pulse)
Qualified to AEC Q101
FDP2572 MOSFET Applications
DC/DC converters and Off-Line UPS
Distributed Power Architectures and VRMs
Primary Switch for 24V and 48V Systems
High Voltage Synchronous Rectifier
Direct Injection / Diesel Injection Systems
42V Automotive Load Control
Electronic Valve Train Systems
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