FDP20N50

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Width :

4.7mm

Additional Feature :

AVALANCHE RATED

Gate Charge (Qg) (Max) @ Vgs :

59.5nC @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

UniFET™

Continuous Drain Current (ID) :

20A

Transistor Element Material :

SILICON

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Threshold Voltage :

5V

Number of Elements :

1

JESD-609 Code :

e3

Fall Time (Typ) :

105 ns

REACH SVHC :

No SVHC

Vgs (Max) :

±30V

Mounting Type :

Through Hole

Element Configuration :

Single

Power Dissipation-Max :

250W Tc

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

5V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds :

3120pF @ 25V

Power Dissipation :

250W

Radiation Hardening :

No

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Length :

10.1mm

Package / Case :

TO-220-3

Number of Terminations :

3

Pbfree Code :

yes

Factory Lead Time :

9 Weeks

Mount :

Through Hole

Gate to Source Voltage (Vgs) :

30V

Weight :

1.8g

Resistance :

230mOhm

Height :

9.4mm

Transistor Application :

SWITCHING

Number of Pins :

3

Contact Plating :

Tin

Turn On Delay Time :

95 ns

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~150°C TJ

Published :

2004

Rise Time :

375ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Turn-Off Delay Time :

100 ns

Pulsed Drain Current-Max (IDM) :

80A

Current - Continuous Drain (Id) @ 25°C :

20A Tc

Drain to Source Breakdown Voltage :

500V

Lead Free :

Lead Free

Rds On (Max) @ Id, Vgs :

230m Ω @ 10A, 10V

Packaging :

Tube

JEDEC-95 Code :

TO-220AB