FDP20N50F

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

TO-220-3

Drive Voltage (Max Rds On,Min Rds On) :

10V

FET Type :

N-Channel

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Factory Lead Time :

6 Weeks

Published :

2004

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

260m Ω @ 10A, 10V

Number of Pins :

3

Operating Temperature :

-55°C~150°C TJ

Pulsed Drain Current-Max (IDM) :

80A

Packaging :

Tube

Mount :

Through Hole

Current - Continuous Drain (Id) @ 25°C :

20A Tc

Power Dissipation :

250W

Transistor Element Material :

SILICON

JESD-609 Code :

e3

Vgs (Max) :

±30V

Element Configuration :

Single

Number of Elements :

1

Vgs(th) (Max) @ Id :

5V @ 250μA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

3390pF @ 25V

Number of Terminations :

3

Mounting Type :

Through Hole

Drain to Source Breakdown Voltage :

500V

ECCN Code :

EAR99

Weight :

1.8g

Turn-Off Delay Time :

100 ns

Series :

UniFET™

Gate to Source Voltage (Vgs) :

30V

JEDEC-95 Code :

TO-220AB

Transistor Application :

SWITCHING

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain-source On Resistance-Max :

0.26Ohm

Terminal Finish :

Tin (Sn)

Pbfree Code :

yes

Turn On Delay Time :

45 ns

Fall Time (Typ) :

60 ns

Power Dissipation-Max :

250W Tc

Continuous Drain Current (ID) :

20A

RoHS Status :

ROHS3 Compliant

Qualification Status :

Not Qualified

Gate Charge (Qg) (Max) @ Vgs :

65nC @ 10V

Rise Time :

120ns

REACH SVHC :

No SVHC