FDP2532

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Length :

10.67mm

Transistor Element Material :

SILICON

Threshold Voltage :

4V

Power Dissipation :

310W

Gate to Source Voltage (Vgs) :

20V

Turn On Delay Time :

16 ns

Element Configuration :

Single

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Height :

9.4mm

Turn-Off Delay Time :

39 ns

Gate Charge (Qg) (Max) @ Vgs :

107nC @ 10V

Operating Temperature :

-55°C~175°C TJ

Terminal Finish :

Tin (Sn)

Package / Case :

TO-220-3

Rise Time :

30ns

Case Connection :

DRAIN

Operating Mode :

ENHANCEMENT MODE

Pbfree Code :

yes

JEDEC-95 Code :

TO-220AB

Voltage - Rated DC :

150V

Power Dissipation-Max :

310W Tc

Factory Lead Time :

9 Weeks

Continuous Drain Current (ID) :

79A

RoHS Status :

ROHS3 Compliant

Resistance :

16mOhm

Published :

2013

Avalanche Energy Rating (Eas) :

400 mJ

Current - Continuous Drain (Id) @ 25°C :

8A Ta 79A Tc

Fall Time (Typ) :

17 ns

Lead Free :

Lead Free

FET Type :

N-Channel

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Series :

PowerTrench®

Mount :

Through Hole

JESD-609 Code :

e3

Current Rating :

79A

Radiation Hardening :

No

REACH SVHC :

No SVHC

Weight :

1.8g

Drain Current-Max (Abs) (ID) :

8A

Mounting Type :

Through Hole

Rds On (Max) @ Id, Vgs :

16m Ω @ 33A, 10V

Number of Terminations :

3

Number of Elements :

1

ECCN Code :

EAR99

Vgs (Max) :

±20V

Width :

4.83mm

Packaging :

Tube

Input Capacitance (Ciss) (Max) @ Vds :

5870pF @ 25V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Recovery Time :

105 ns

Number of Pins :

3

Vgs(th) (Max) @ Id :

4V @ 250µA

Drain to Source Breakdown Voltage :

150V