FDP2670

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Peak Reflow Temperature (Cel) :

Not Applicable

Number of Elements :

1

Transistor Element Material :

SILICON

Drain Current-Max (Abs) (ID) :

19A

Terminal Position :

Single

Avalanche Energy Rating (Eas) :

375 mJ

Drain to Source Voltage (Vdss) :

200V

Input Capacitance (Ciss) (Max) @ Vds :

1.32pF @ 100V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

3

Power Dissipation-Max :

93W Tc

Terminal Finish :

MATTE TIN

Package / Case :

TO-220-3

Vgs (Max) :

±20V

Current - Continuous Drain (Id) @ 25°C :

19A Ta

JESD-30 Code :

R-PSFM-T3

JESD-609 Code :

e3

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

130m Ω @ 10A, 10V

Series :

PowerTrench®

Pin Count :

3

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Reach Compliance Code :

Unknown

Pbfree Code :

yes

Operating Temperature :

-65°C~175°C TJ

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

Mounting Type :

Through Hole

JEDEC-95 Code :

TO-220AB

Packaging :

Tube

Configuration :

SINGLE WITH BUILT-IN DIODE

Surface Mount :

No

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Mode :

ENHANCEMENT MODE

Pulsed Drain Current-Max (IDM) :

40A

Drain-source On Resistance-Max :

0.13Ohm

Gate Charge (Qg) (Max) @ Vgs :

38nC @ 10V

DS Breakdown Voltage-Min :

200V

Transistor Application :

SWITCHING

Qualification Status :

COMMERCIAL