FDMA2002NZ

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Transistor Element Material :

SILICON

Turn-Off Delay Time :

12 ns

FET Type :

2 N-Channel (Dual)

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Drain to Source Breakdown Voltage :

30V

REACH SVHC :

No SVHC

Rds On (Max) @ Id, Vgs :

123m Ω @ 2.9A, 4.5V

Number of Pins :

6

Number of Elements :

2

Continuous Drain Current (ID) :

2.9A

Input Capacitance (Ciss) (Max) @ Vds :

220pF @ 15V

Transistor Application :

SWITCHING

Lead Free :

Lead Free

Gate to Source Voltage (Vgs) :

12V

Resistance :

123mOhm

Turn On Delay Time :

6 ns

Operating Mode :

ENHANCEMENT MODE

Power Dissipation :

1.5W

Packaging :

Tape and Reel (TR)

Feedback Cap-Max (Crss) :

30 pF

Max Junction Temperature (Tj) :

150°C

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Width :

2mm

JESD-609 Code :

e4

Rise Time :

8ns

Package / Case :

6-VDFN Exposed Pad

RoHS Status :

ROHS3 Compliant

Weight :

40mg

Operating Temperature :

-55°C~150°C TJ

Number of Terminations :

6

Mounting Type :

Surface Mount

Threshold Voltage :

1V

Voltage - Rated DC :

30V

Series :

PowerTrench®

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs :

3nC @ 4.5V

Mount :

Surface Mount

Fall Time (Typ) :

8 ns

FET Technology :

METAL-OXIDE SEMICONDUCTOR

ECCN Code :

EAR99

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

FET Feature :

Logic Level Gate

Factory Lead Time :

16 Weeks

Length :

2mm

Height :

850μm

Current Rating :

2.9A

Element Configuration :

Dual

Case Connection :

DRAIN

Pbfree Code :

yes

Max Power Dissipation :

650mW