FDMA1023PZ

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Mounting Type :

Surface Mount

Contact Plating :

Gold

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Gate Charge (Qg) (Max) @ Vgs :

12nC @ 4.5V

Width :

2mm

Input Capacitance (Ciss) (Max) @ Vds :

655pF @ 10V

Turn-Off Delay Time :

64 ns

FET Technology :

METAL-OXIDE SEMICONDUCTOR

JESD-609 Code :

e4

ECCN Code :

EAR99

Drain to Source Breakdown Voltage :

-20V

Weight :

40mg

Max Power Dissipation :

1.5W

Drain to Source Voltage (Vdss) :

20V

Current - Continuous Drain (Id) @ 25°C :

3.7A

Rise Time :

12ns

Number of Elements :

2

Package / Case :

6-VDFN Exposed Pad

Threshold Voltage :

-700mV

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lead Free :

Lead Free

Packaging :

Tape and Reel (TR)

Feedback Cap-Max (Crss) :

135 pF

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

16 Weeks

Length :

2mm

Transistor Element Material :

SILICON

Radiation Hardening :

No

Power Dissipation :

1.5W

Mount :

Surface Mount

Turn On Delay Time :

9 ns

Element Configuration :

Dual

Number of Pins :

6

Power - Max :

700mW

Transistor Application :

SWITCHING

REACH SVHC :

No SVHC

Height :

750μm

FET Type :

2 P-Channel (Dual)

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Fall Time (Typ) :

12 ns

Case Connection :

DRAIN

Number of Terminations :

6

Gate to Source Voltage (Vgs) :

8V

Pbfree Code :

yes

Rds On (Max) @ Id, Vgs :

72m Ω @ 3.7A, 4.5V

Nominal Vgs :

-700 mV

Published :

2009

Series :

PowerTrench®

Operating Mode :

ENHANCEMENT MODE

FET Feature :

Logic Level Gate

Continuous Drain Current (ID) :

-3.7A