FDMA1023PZ
- Mfr.Part #
- FDMA1023PZ
- Manufacturer
- onsemi
- Package / Case
- 6-VDFN Exposed Pad
- Datasheet
- Download
- Description
- MOSFET 2P-CH 20V 3.7A 6MICROFET
- Stock
- 17,294
- In Stock :
- 17,294
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Height :
- 750μm
- ECCN Code :
- EAR99
- Vgs(th) (Max) @ Id :
- 1.5V @ 250µA
- Current - Continuous Drain (Id) @ 25°C :
- 3.7A
- Package / Case :
- 6-VDFN Exposed Pad
- Input Capacitance (Ciss) (Max) @ Vds :
- 655pF @ 10V
- Nominal Vgs :
- -700 mV
- JESD-609 Code :
- e4
- Number of Elements :
- 2
- Gate Charge (Qg) (Max) @ Vgs :
- 12nC @ 4.5V
- Power - Max :
- 700mW
- Contact Plating :
- Gold
- Rds On (Max) @ Id, Vgs :
- 72m Ω @ 3.7A, 4.5V
- Continuous Drain Current (ID) :
- -3.7A
- Max Power Dissipation :
- 1.5W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- REACH SVHC :
- No SVHC
- Length :
- 2mm
- Number of Pins :
- 6
- Gate to Source Voltage (Vgs) :
- 8V
- RoHS Status :
- ROHS3 Compliant
- Lead Free :
- Lead Free
- Drain to Source Voltage (Vdss) :
- 20V
- FET Type :
- 2 P-Channel (Dual)
- Case Connection :
- DRAIN
- Mount :
- Surface Mount
- Radiation Hardening :
- No
- Transistor Application :
- SWITCHING
- Threshold Voltage :
- -700mV
- Weight :
- 40mg
- Rise Time :
- 12ns
- Published :
- 2009
- Width :
- 2mm
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Factory Lead Time :
- 16 Weeks
- Series :
- PowerTrench®
- Packaging :
- Tape and Reel (TR)
- Drain to Source Breakdown Voltage :
- -20V
- Feedback Cap-Max (Crss) :
- 135 pF
- Number of Terminations :
- 6
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Operating Mode :
- ENHANCEMENT MODE
- Operating Temperature :
- -55°C~150°C TJ
- Fall Time (Typ) :
- 12 ns
- Transistor Element Material :
- SILICON
- Turn On Delay Time :
- 9 ns
- FET Feature :
- Logic Level Gate
- Element Configuration :
- Dual
- Turn-Off Delay Time :
- 64 ns
- Power Dissipation :
- 1.5W
- Mounting Type :
- Surface Mount
- Pbfree Code :
- yes
- Datasheets
- FDMA1023PZ

FDMA1023PZ datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at
FDMA1023PZ Description
The device is a single package solution specifically designed for battery charging switches in cellular phones and other ultra-portable applications. It has two independent P-channel MOSFET with low on-resistance and minimum on-loss. When connected in a typical public power configuration, two-way current flow can be achieved. The MicroFET 2X2 package provides excellent thermal performance for its physical size and is ideal for linear mode applications.
FDMA1023PZ Features
Max rDS(on) = 72m|? at VGS = ¨C4.5V, ID = ¨C3.7A
Max rDS(on) = 95m|? at VGS = ¨C2.5V, ID = ¨C3.2A
Max rDS(on) = 130m|? at VGS = ¨C1.8V, ID = ¨C2.0A
Max rDS(on) = 195m|? at VGS = ¨C1.5V, ID = ¨C1.0A
Low profile - 0.8 mm maximum - in the new packageMicroFET 2x2 mm
HBM ESD protection level > 2kV typical
RoHS Compliant
Free from halogenated compounds and antimonyoxides
FDMA1023PZ Applications
This product is general usage and suitable for many different applications.
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