FDMA1023PZ

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

Mount :

Surface Mount

Drain to Source Breakdown Voltage :

-20V

Operating Mode :

ENHANCEMENT MODE

Fall Time (Typ) :

12 ns

JESD-609 Code :

e4

Input Capacitance (Ciss) (Max) @ Vds :

655pF @ 10V

Case Connection :

DRAIN

FET Type :

2 P-Channel (Dual)

Gate Charge (Qg) (Max) @ Vgs :

12nC @ 4.5V

Rds On (Max) @ Id, Vgs :

72m Ω @ 3.7A, 4.5V

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Continuous Drain Current (ID) :

-3.7A

Number of Terminations :

6

Rise Time :

12ns

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~150°C TJ

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Mounting Type :

Surface Mount

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Power - Max :

700mW

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Length :

2mm

Weight :

40mg

Contact Plating :

Gold

Drain to Source Voltage (Vdss) :

20V

Feedback Cap-Max (Crss) :

135 pF

Width :

2mm

REACH SVHC :

No SVHC

Pbfree Code :

yes

Height :

750μm

Radiation Hardening :

No

Factory Lead Time :

16 Weeks

Nominal Vgs :

-700 mV

Lead Free :

Lead Free

Package / Case :

6-VDFN Exposed Pad

FET Feature :

Logic Level Gate

Threshold Voltage :

-700mV

Turn-Off Delay Time :

64 ns

Max Power Dissipation :

1.5W

Number of Pins :

6

Series :

PowerTrench®

Number of Elements :

2

Packaging :

Tape and Reel (TR)

Element Configuration :

Dual

Published :

2009

ECCN Code :

EAR99

Current - Continuous Drain (Id) @ 25°C :

3.7A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

8V

Power Dissipation :

1.5W

Turn On Delay Time :

9 ns