FDMA1027P
- Mfr.Part #
- FDMA1027P
- Manufacturer
- onsemi
- Package / Case
- 6-VDFN Exposed Pad
- Datasheet
- Download
- Description
- MOSFET 2P-CH 20V 3A MICROFET
- Stock
- 28,643
- In Stock :
- 28,643
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- FET Feature :
- Logic Level Gate
- Terminal Finish :
- Nickel/Palladium/Gold (Ni/Pd/Au)
- Transistor Element Material :
- SILICON
- Gate Charge (Qg) (Max) @ Vgs :
- 6nC @ 4.5V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Packaging :
- Tape and Reel (TR)
- Case Connection :
- DRAIN
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Rds On (Max) @ Id, Vgs :
- 120m Ω @ 3A, 4.5V
- Turn On Delay Time :
- 9 ns
- Length :
- 2mm
- Mounting Type :
- Surface Mount
- Width :
- 2mm
- Number of Pins :
- 6
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- FET Type :
- 2 P-Channel (Dual)
- Gate to Source Voltage (Vgs) :
- 8V
- Series :
- PowerTrench®
- Turn-Off Delay Time :
- 15 ns
- Drain to Source Voltage (Vdss) :
- 20V
- Number of Terminations :
- 6
- Mount :
- Surface Mount
- Current - Continuous Drain (Id) @ 25°C :
- 3A
- Operating Temperature :
- -55°C~150°C TJ
- Fall Time (Typ) :
- 11 ns
- Weight :
- 40mg
- Terminal Form :
- NO LEAD
- Number of Elements :
- 2
- Pbfree Code :
- yes
- Element Configuration :
- Dual
- Power Dissipation :
- 1.4W
- Continuous Drain Current (ID) :
- 2.2A
- Input Capacitance (Ciss) (Max) @ Vds :
- 435pF @ 10V
- ECCN Code :
- EAR99
- JESD-609 Code :
- e4
- Qualification Status :
- Not Qualified
- Drain to Source Breakdown Voltage :
- -20V
- Vgs(th) (Max) @ Id :
- 1.3V @ 250µA
- Max Power Dissipation :
- 800mW
- Package / Case :
- 6-VDFN Exposed Pad
- RoHS Status :
- ROHS3 Compliant
- Height :
- 750μm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Factory Lead Time :
- 16 Weeks
- Rise Time :
- 11ns
- Transistor Application :
- SWITCHING
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Operating Mode :
- ENHANCEMENT MODE
- Datasheets
- FDMA1027P

FDMA1027P datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at
FDMA1027P Description
The device is a single package solution specifically designed for battery charging switches in cellular phones and other ultra-portable applications. It has two independent P-channel MOSFET with low on-resistance and minimum on-loss. Bidirectional current flow is possible when connected in a typical common source configuration. MicroFET 2x2 packages provide excellent thermal performance in terms of physical size and are ideal for linear mode applications.
FDMA1027P Features
-3.0 A, -20V
RDS(ON) = 120 m|? @ VGS = -4.5 V
RDS(ON) = 160 m|? @ VGS = -2.5 V
RDS(ON) = 240 m|? @ VGS = -1.8 V
Low Profile - 0.8 mm maximun - in the new package MicroFET 2x2 mm
RoHS compliant
Free from halogenated compounds and antimonyoxides
FDMA1027P Applications
This product is general usage and suitable for many different applications.
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