FDG6332C

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Max Power Dissipation :

300mW

Input Capacitance (Ciss) (Max) @ Vds :

113pF @ 10V

Threshold Voltage :

1.1V

Terminal Form :

Gull wing

Rds On (Max) @ Id, Vgs :

300m Ω @ 700mA, 4.5V

Operating Temperature :

-55°C~150°C TJ

Lead Free :

Lead Free

Current Rating :

700mA

ECCN Code :

EAR99

Contact Plating :

Tin

Power Dissipation :

300mW

Factory Lead Time :

10 Weeks

FET Feature :

Logic Level Gate

Max Junction Temperature (Tj) :

150°C

Published :

2017

Resistance :

300mOhm

Number of Pins :

6

Current - Continuous Drain (Id) @ 25°C :

700mA 600mA

Continuous Drain Current (ID) :

700mA

Current :

7A

Width :

1.25mm

Voltage :

20V

Series :

PowerTrench®

FET Type :

N and P-Channel

Gate Charge (Qg) (Max) @ Vgs :

1.5nC @ 4.5V

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Package / Case :

6-TSSOP, SC-88, SOT-363

Turn-Off Delay Time :

6 ns

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Gate to Source Voltage (Vgs) :

12V

Length :

2mm

Height :

1.1mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

RoHS Status :

ROHS3 Compliant

Number of Elements :

2

Operating Mode :

ENHANCEMENT MODE

Drain to Source Breakdown Voltage :

20V

Number of Terminations :

6

REACH SVHC :

No SVHC

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Transistor Element Material :

SILICON

Element Configuration :

Dual

Mounting Type :

Surface Mount

Pbfree Code :

yes

Mount :

Surface Mount

Packaging :

Tape and Reel (TR)

Transistor Application :

SWITCHING

Fall Time (Typ) :

14 ns

Rise Time :

14ns

Radiation Hardening :

No