FDG6303N

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

450m Ω @ 500mA, 4.5V

Resistance :

450mOhm

Published :

1999

Transistor Application :

SWITCHING

Nominal Vgs :

800 mV

Mounting Type :

Surface Mount

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Dual Supply Voltage :

25V

Contact Plating :

Tin

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Feature :

Logic Level Gate

Power Dissipation :

300mW

Length :

2mm

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Element Configuration :

Dual

Height :

1mm

ECCN Code :

EAR99

Weight :

28mg

Input Capacitance (Ciss) (Max) @ Vds :

50pF @ 10V

Package / Case :

6-TSSOP, SC-88, SOT-363

Number of Elements :

2

Packaging :

Tape and Reel (TR)

Continuous Drain Current (ID) :

500mA

JESD-609 Code :

e3

Gate to Source Voltage (Vgs) :

8V

Turn On Delay Time :

3 ns

Mount :

Surface Mount

Additional Feature :

LOGIC LEVEL COMPATIBLE

Turn-Off Delay Time :

17 ns

RoHS Status :

ROHS3 Compliant

Pbfree Code :

yes

Rise Time :

8.5ns

Operating Temperature :

-55°C~150°C TJ

Factory Lead Time :

10 Weeks

Fall Time (Typ) :

8.5 ns

Radiation Hardening :

No

Number of Pins :

6

Drain Current-Max (Abs) (ID) :

0.5A

Number of Terminations :

6

Terminal Form :

Gull wing

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Termination :

SMD/SMT

FET Type :

2 N-Channel (Dual)

Operating Mode :

ENHANCEMENT MODE

REACH SVHC :

No SVHC

Gate Charge (Qg) (Max) @ Vgs :

2.3nC @ 4.5V

Drain to Source Breakdown Voltage :

25V

Width :

1.25mm

Voltage - Rated DC :

25V

Max Power Dissipation :

300mW

Lead Free :

Lead Free

Current Rating :

500mA

Threshold Voltage :

800mV