FDG6301N

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Width :

1.25mm

Transistor Application :

SWITCHING

Drain to Source Breakdown Voltage :

25V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Max Junction Temperature (Tj) :

150°C

Number of Terminations :

6

Continuous Drain Current (ID) :

220mA

Voltage - Rated DC :

25V

Mount :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

Current Rating :

220mA

Power Dissipation :

300mW

Pbfree Code :

yes

Termination :

SMD/SMT

FET Feature :

Logic Level Gate

Terminal Form :

Gull wing

FET Type :

2 N-Channel (Dual)

Mounting Type :

Surface Mount

Dual Supply Voltage :

25V

Contact Plating :

Tin

Fall Time (Typ) :

4.5 ns

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Gate to Source Voltage (Vgs) :

8V

Element Configuration :

Dual

RoHS Status :

ROHS3 Compliant

Additional Feature :

LOGIC LEVEL COMPATIBLE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rise Time :

4.5ns

Height :

1.1mm

Length :

2mm

Lead Free :

Lead Free

Threshold Voltage :

850mV

Rds On (Max) @ Id, Vgs :

4 Ω @ 220mA, 4.5V

REACH SVHC :

No SVHC

Package / Case :

6-TSSOP, SC-88, SOT-363

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Transistor Element Material :

SILICON

Factory Lead Time :

10 Weeks

Turn-Off Delay Time :

4 ns

Resistance :

4Ohm

Weight :

28mg

Gate Charge (Qg) (Max) @ Vgs :

0.4nC @ 4.5V

Published :

1999

JESD-609 Code :

e3

Turn On Delay Time :

5 ns

Number of Elements :

2

Packaging :

Tape and Reel (TR)

Number of Pins :

6

Input Capacitance (Ciss) (Max) @ Vds :

9.5pF @ 10V

Max Power Dissipation :

300mW

ECCN Code :

EAR99

Radiation Hardening :

No