FDG6301N

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Fall Time (Typ) :

4.5 ns

Turn-Off Delay Time :

4 ns

Width :

1.25mm

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Number of Elements :

2

Mount :

Surface Mount

Termination :

SMD/SMT

Input Capacitance (Ciss) (Max) @ Vds :

9.5pF @ 10V

Transistor Element Material :

SILICON

Additional Feature :

LOGIC LEVEL COMPATIBLE

Voltage - Rated DC :

25V

REACH SVHC :

No SVHC

Drain to Source Breakdown Voltage :

25V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

8V

Turn On Delay Time :

5 ns

Resistance :

4Ohm

Max Junction Temperature (Tj) :

150°C

Threshold Voltage :

850mV

Continuous Drain Current (ID) :

220mA

Packaging :

Tape and Reel (TR)

Package / Case :

6-TSSOP, SC-88, SOT-363

Transistor Application :

SWITCHING

JESD-609 Code :

e3

Dual Supply Voltage :

25V

Published :

1999

Element Configuration :

Dual

Length :

2mm

FET Feature :

Logic Level Gate

Height :

1.1mm

ECCN Code :

EAR99

Number of Pins :

6

Mounting Type :

Surface Mount

Pbfree Code :

yes

Gate Charge (Qg) (Max) @ Vgs :

0.4nC @ 4.5V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Radiation Hardening :

No

Contact Plating :

Tin

Weight :

28mg

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

Gull wing

Factory Lead Time :

10 Weeks

Rise Time :

4.5ns

Operating Temperature :

-55°C~150°C TJ

Rds On (Max) @ Id, Vgs :

4 Ω @ 220mA, 4.5V

Current Rating :

220mA

Lead Free :

Lead Free

Number of Terminations :

6

Max Power Dissipation :

300mW

FET Type :

2 N-Channel (Dual)

RoHS Status :

ROHS3 Compliant

Power Dissipation :

300mW