FDG6308P

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Continuous Drain Current (ID) :

600mA

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Transistor Application :

SWITCHING

Power Dissipation :

300mW

Input Capacitance (Ciss) (Max) @ Vds :

153pF @ 10V

Rise Time :

15ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Breakdown Voltage :

-20V

Turn On Delay Time :

5 ns

Length :

2mm

Pbfree Code :

yes

Mount :

Surface Mount

Current Rating :

-600mA

Number of Terminations :

6

JESD-609 Code :

e3

Transistor Element Material :

SILICON

Gate to Source Voltage (Vgs) :

8V

Element Configuration :

Dual

Turn-Off Delay Time :

7 ns

Terminal Finish :

Tin (Sn)

Operating Temperature :

-55°C~150°C TJ

Width :

1.25mm

Package / Case :

6-TSSOP, SC-88, SOT-363

RoHS Status :

ROHS3 Compliant

Operating Mode :

ENHANCEMENT MODE

Max Power Dissipation :

300mW

Fall Time (Typ) :

15 ns

Voltage - Rated DC :

-20V

Rds On (Max) @ Id, Vgs :

400m Ω @ 600mA, 4.5V

FET Type :

2 P-Channel (Dual)

Weight :

28mg

Number of Elements :

2

Gate Charge (Qg) (Max) @ Vgs :

2.5nC @ 4.5V

Drain to Source Voltage (Vdss) :

20V

Mounting Type :

Surface Mount

Factory Lead Time :

10 Weeks

Resistance :

400mOhm

Packaging :

Tape and Reel (TR)

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

ECCN Code :

EAR99

Lead Free :

Lead Free

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Radiation Hardening :

No

Number of Pins :

6

Series :

PowerTrench®

Height :

1mm

FET Feature :

Logic Level Gate

Terminal Form :

Gull wing