FDG6302P

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

Terminal Finish :

MATTE TIN

Number of Terminations :

6

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Drain Current-Max (Abs) (ID) :

0.14A

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Number of Elements :

2

Mounting Type :

Surface Mount

DS Breakdown Voltage-Min :

25V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Reach Compliance Code :

Unknown

Pin Count :

6

RoHS Status :

ROHS3 Compliant

Pbfree Code :

yes

Input Capacitance (Ciss) (Max) @ Vds :

12pF @ 10V

Surface Mount :

yes

Operating Mode :

ENHANCEMENT MODE

FET Feature :

Logic Level Gate

Qualification Status :

COMMERCIAL

Drain to Source Voltage (Vdss) :

25V

Power - Max :

300mW

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

10 Ω @ 140mA, 4.5V

Transistor Application :

SWITCHING

Terminal Form :

Gull wing

Package / Case :

6-TSSOP, SC-88, SOT-363

JESD-30 Code :

R-PDSO-G6

Operating Temperature :

-55°C~150°C TJ

Peak Reflow Temperature (Cel) :

260

FET Type :

2 P-Channel (Dual)

Gate Charge (Qg) (Max) @ Vgs :

0.31nC @ 4.5V

Vgs(th) (Max) @ Id :

1.5V @ 250µA

JESD-609 Code :

e3

Packaging :

Tape and Reel (TR)

Current - Continuous Drain (Id) @ 25°C :

140mA

Additional Feature :

LOGIC LEVEL COMPATIBLE