FDG6322C

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Input Capacitance (Ciss) (Max) @ Vds :

9.5pF @ 10V

Fall Time (Typ) :

8 ns

Nominal Vgs :

850 mV

Number of Terminations :

6

Element Configuration :

Dual

Width :

1.25mm

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Published :

2017

Turn-Off Delay Time :

55 ns

Pbfree Code :

yes

FET Feature :

Logic Level Gate

Gate Charge (Qg) (Max) @ Vgs :

0.4nC @ 4.5V

Mount :

Surface Mount

Number of Elements :

2

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Power Dissipation :

300mW

Rds On (Max) @ Id, Vgs :

4 Ω @ 220mA, 4.5V

Package / Case :

6-TSSOP, SC-88, SOT-363

Transistor Element Material :

SILICON

Radiation Hardening :

No

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Length :

2mm

Operating Mode :

ENHANCEMENT MODE

Lead Free :

Lead Free

Rise Time :

8ns

Drain to Source Breakdown Voltage :

25V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Number of Pins :

6

Operating Temperature :

-55°C~150°C TJ

Threshold Voltage :

850mV

Terminal Finish :

Tin (Sn)

RoHS Status :

ROHS3 Compliant

Weight :

28mg

Current Rating :

220mA

FET Type :

N and P-Channel

Packaging :

Tape and Reel (TR)

Height :

1mm

Terminal Form :

Gull wing

Gate to Source Voltage (Vgs) :

8V

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Transistor Application :

SWITCHING

Continuous Drain Current (ID) :

220mA

Resistance :

4Ohm

Max Power Dissipation :

300mW

Mounting Type :

Surface Mount

JESD-609 Code :

e3

REACH SVHC :

No SVHC

Current - Continuous Drain (Id) @ 25°C :

220mA 410mA

Additional Feature :

LOGIC LEVEL COMPATIBLE

Factory Lead Time :

10 Weeks