FDG6320C

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Drain to Source Breakdown Voltage :

25V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

300mW

Current Rating :

220mA

Gate Charge (Qg) (Max) @ Vgs :

0.4nC @ 4.5V

Mount :

Surface Mount

Weight :

28mg

Packaging :

Tape and Reel (TR)

Number of Elements :

2

Operating Temperature :

-55°C~150°C TJ

Height :

1.1mm

Width :

1.25mm

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Lead Free :

Lead Free

Operating Mode :

ENHANCEMENT MODE

Turn On Delay Time :

5 ns

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Number of Pins :

6

Published :

2017

Transistor Element Material :

SILICON

Terminal Form :

Gull wing

Dual Supply Voltage :

25V

Gate to Source Voltage (Vgs) :

8V

Pbfree Code :

yes

Package / Case :

6-TSSOP, SC-88, SOT-363

Max Power Dissipation :

300mW

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Input Capacitance (Ciss) (Max) @ Vds :

9.5pF @ 10V

Contact Plating :

Tin

Current - Continuous Drain (Id) @ 25°C :

220mA 140mA

Radiation Hardening :

No

Continuous Drain Current (ID) :

220mA

FET Type :

N and P-Channel

Length :

2mm

Turn-Off Delay Time :

9 ns

Termination :

SMD/SMT

Element Configuration :

Dual

Threshold Voltage :

850mV

Rds On (Max) @ Id, Vgs :

4 Ω @ 220mA, 4.5V

Rise Time :

8ns

JESD-609 Code :

e3

Max Junction Temperature (Tj) :

150°C

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

FET Feature :

Logic Level Gate

Additional Feature :

LOGIC LEVEL COMPATIBLE

Number of Terminations :

6

Factory Lead Time :

10 Weeks

ECCN Code :

EAR99

REACH SVHC :

No SVHC

Transistor Application :

SWITCHING

Fall Time (Typ) :

8 ns

Resistance :

4Ohm