FDG6316P
- Mfr.Part #
- FDG6316P
- Manufacturer
- onsemi
- Package / Case
- 6-TSSOP, SC-88, SOT-363
- Datasheet
- Download
- Description
- MOSFET 2P-CH 12V 0.7A SC70-6
- Stock
- 13,129
- In Stock :
- 13,129
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Vgs(th) (Max) @ Id :
- 1.5V @ 250µA
- Mounting Type :
- Surface Mount
- JESD-609 Code :
- e3
- Length :
- 2mm
- Drain to Source Voltage (Vdss) :
- 12V
- Packaging :
- Tape and Reel (TR)
- Resistance :
- 270mOhm
- Width :
- 1.25mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Radiation Hardening :
- No
- Input Capacitance (Ciss) (Max) @ Vds :
- 146pF @ 6V
- Threshold Voltage :
- -600mV
- Contact Plating :
- Tin
- Lead Free :
- Lead Free
- Pbfree Code :
- yes
- Height :
- 1.1mm
- Continuous Drain Current (ID) :
- -700mA
- Operating Temperature :
- -55°C~150°C TJ
- Drain Current-Max (Abs) (ID) :
- 0.7A
- Number of Pins :
- 6
- Element Configuration :
- Dual
- Fall Time (Typ) :
- 13 ns
- Max Junction Temperature (Tj) :
- 150°C
- Factory Lead Time :
- 10 Weeks
- Series :
- PowerTrench®
- Current - Continuous Drain (Id) @ 25°C :
- 700mA
- Gate Charge (Qg) (Max) @ Vgs :
- 2.4nC @ 4.5V
- Turn-Off Delay Time :
- 8 ns
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Drain to Source Breakdown Voltage :
- -12V
- Mount :
- Surface Mount
- Operating Mode :
- ENHANCEMENT MODE
- FET Type :
- 2 P-Channel (Dual)
- Number of Terminations :
- 6
- Rise Time :
- 13ns
- ECCN Code :
- EAR99
- Transistor Element Material :
- SILICON
- Transistor Application :
- SWITCHING
- Current Rating :
- -700mA
- Weight :
- 28mg
- FET Feature :
- Logic Level Gate
- Gate to Source Voltage (Vgs) :
- 8V
- Max Power Dissipation :
- 300mW
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation :
- 300mW
- Terminal Form :
- Gull wing
- Rds On (Max) @ Id, Vgs :
- 270m Ω @ 700mA, 4.5V
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Published :
- 2001
- REACH SVHC :
- No SVHC
- Package / Case :
- 6-TSSOP, SC-88, SOT-363
- Voltage - Rated DC :
- -12V
- Number of Elements :
- 2
- Turn On Delay Time :
- 5 ns
- Datasheets
- FDG6316P

FDG6316P datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at
FDG6316P Description
Rohm N-channel and P-channel MOSFET have the characteristics of low on-resistance and high switching speed. It has a wide lineup from small signal MOSFET to power MOSFET and can be used in a variety of applications.
FDG6316P Features
? ?0.7 A, ?12 V
? RDS(ON) = 270 m @ VGS = ?4.5 V
? RDS(ON) = 360 m @ VGS = ?2.5 V
? RDS(ON) = 650 m @ VGS = ?1.8 V
? Low Gate Charge
? High Performance Trench Technology for Extremely Low RDS(ON)
? Compact Industry Standard SC70?6 Surface Mount Package
? These Devices are Pb?Free and are RoHS Compliant
FDG6316P Applications
? Battery Management
? Load Switch
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