FDG6316P

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Mfr.Part #
FDG6316P
Manufacturer
onsemi
Package / Case
6-TSSOP, SC-88, SOT-363
Datasheet
Download
Description
MOSFET 2P-CH 12V 0.7A SC70-6
Stock
13,129
In Stock :
13,129

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Arrays
Vgs(th) (Max) @ Id :
1.5V @ 250µA
Mounting Type :
Surface Mount
JESD-609 Code :
e3
Length :
2mm
Drain to Source Voltage (Vdss) :
12V
Packaging :
Tape and Reel (TR)
Resistance :
270mOhm
Width :
1.25mm
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Radiation Hardening :
No
Input Capacitance (Ciss) (Max) @ Vds :
146pF @ 6V
Threshold Voltage :
-600mV
Contact Plating :
Tin
Lead Free :
Lead Free
Pbfree Code :
yes
Height :
1.1mm
Continuous Drain Current (ID) :
-700mA
Operating Temperature :
-55°C~150°C TJ
Drain Current-Max (Abs) (ID) :
0.7A
Number of Pins :
6
Element Configuration :
Dual
Fall Time (Typ) :
13 ns
Max Junction Temperature (Tj) :
150°C
Factory Lead Time :
10 Weeks
Series :
PowerTrench®
Current - Continuous Drain (Id) @ 25°C :
700mA
Gate Charge (Qg) (Max) @ Vgs :
2.4nC @ 4.5V
Turn-Off Delay Time :
8 ns
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Drain to Source Breakdown Voltage :
-12V
Mount :
Surface Mount
Operating Mode :
ENHANCEMENT MODE
FET Type :
2 P-Channel (Dual)
Number of Terminations :
6
Rise Time :
13ns
ECCN Code :
EAR99
Transistor Element Material :
SILICON
Transistor Application :
SWITCHING
Current Rating :
-700mA
Weight :
28mg
FET Feature :
Logic Level Gate
Gate to Source Voltage (Vgs) :
8V
Max Power Dissipation :
300mW
RoHS Status :
ROHS3 Compliant
Power Dissipation :
300mW
Terminal Form :
Gull wing
Rds On (Max) @ Id, Vgs :
270m Ω @ 700mA, 4.5V
Lifecycle Status :
ACTIVE (Last Updated: 2 days ago)
Published :
2001
REACH SVHC :
No SVHC
Package / Case :
6-TSSOP, SC-88, SOT-363
Voltage - Rated DC :
-12V
Number of Elements :
2
Turn On Delay Time :
5 ns
Datasheets
FDG6316P
Introducing Transistors - FETs, MOSFETs - Arrays onsemi FDG6316P from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Operating Temperature:-55°C~150°C TJ, Number of Pins:6, Number of Terminations:6, Package / Case:6-TSSOP, SC-88, SOT-363, FDG6316P pinout, FDG6316P datasheet PDF, FDG6316P amp .Beyond Transistors - FETs, MOSFETs - Arrays onsemi FDG6316P ,we also offer SSM6N57NU,LF, DMN2004DMK-7, AO4629, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDG6316P


FDG6316P datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at

FDG6316P      Description


  Rohm N-channel and P-channel MOSFET have the characteristics of low on-resistance and high switching speed. It has a wide lineup from small signal MOSFET to power MOSFET and can be used in a variety of applications.

 

FDG6316P    Features    


? ?0.7 A, ?12 V

? RDS(ON) = 270 m @ VGS = ?4.5 V

? RDS(ON) = 360 m @ VGS = ?2.5 V

? RDS(ON) = 650 m @ VGS = ?1.8 V

? Low Gate Charge

? High Performance Trench Technology for Extremely Low RDS(ON)

? Compact Industry Standard SC70?6 Surface Mount Package

? These Devices are Pb?Free and are RoHS Compliant


FDG6316P       Applications


? Battery Management

? Load Switch

 





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