FDG6316P

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Max Power Dissipation :

300mW

Resistance :

270mOhm

Continuous Drain Current (ID) :

-700mA

Number of Pins :

6

Number of Terminations :

6

REACH SVHC :

No SVHC

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Voltage - Rated DC :

-12V

Operating Temperature :

-55°C~150°C TJ

Length :

2mm

Rds On (Max) @ Id, Vgs :

270m Ω @ 700mA, 4.5V

Turn-Off Delay Time :

8 ns

Package / Case :

6-TSSOP, SC-88, SOT-363

Input Capacitance (Ciss) (Max) @ Vds :

146pF @ 6V

Current Rating :

-700mA

Power Dissipation :

300mW

Width :

1.25mm

Current - Continuous Drain (Id) @ 25°C :

700mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

2.4nC @ 4.5V

JESD-609 Code :

e3

FET Type :

2 P-Channel (Dual)

RoHS Status :

ROHS3 Compliant

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

ECCN Code :

EAR99

Rise Time :

13ns

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Pbfree Code :

yes

Drain to Source Voltage (Vdss) :

12V

Weight :

28mg

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

Gull wing

Series :

PowerTrench®

Lead Free :

Lead Free

Transistor Application :

SWITCHING

Number of Elements :

2

Gate to Source Voltage (Vgs) :

8V

Packaging :

Tape and Reel (TR)

Element Configuration :

Dual

Drain to Source Breakdown Voltage :

-12V

Published :

2001

Mount :

Surface Mount

Threshold Voltage :

-600mV

Turn On Delay Time :

5 ns

Max Junction Temperature (Tj) :

150°C

Drain Current-Max (Abs) (ID) :

0.7A

Factory Lead Time :

10 Weeks

Transistor Element Material :

SILICON

Fall Time (Typ) :

13 ns

Radiation Hardening :

No

Mounting Type :

Surface Mount

Contact Plating :

Tin

Height :

1.1mm

FET Feature :

Logic Level Gate