FDD6N25TM

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

REACH SVHC :

No SVHC

JESD-609 Code :

e3

Gate Charge (Qg) (Max) @ Vgs :

6nC @ 10V

Continuous Drain Current (ID) :

4.4A

Packaging :

Tape and Reel (TR)

Weight :

260.37mg

Lifecycle Status :

ACTIVE (Last Updated: 20 hours ago)

Radiation Hardening :

No

Avalanche Energy Rating (Eas) :

45 mJ

Number of Elements :

1

Turn On Delay Time :

10 ns

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

250pF @ 25V

Height :

2.39mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Single

Rise Time :

25ns

JEDEC-95 Code :

TO-252AA

Width :

6.22mm

Rds On (Max) @ Id, Vgs :

1.1 Ω @ 2.2A, 10V

Power Dissipation-Max :

50W Tc

Factory Lead Time :

4 Weeks

Number of Terminations :

2

Additional Feature :

FAST SWITCHING

Lead Free :

Lead Free

Number of Pins :

3

Turn-Off Delay Time :

7 ns

Transistor Element Material :

SILICON

Series :

UniFET™

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

4.4A Tc

Mounting Type :

Surface Mount

Threshold Voltage :

5V

Vgs (Max) :

±30V

Operating Mode :

ENHANCEMENT MODE

Length :

6.73mm

Pbfree Code :

yes

Case Connection :

DRAIN

Drain to Source Breakdown Voltage :

250V

Mount :

Surface Mount

JESD-30 Code :

R-PSSO-G2

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Vgs(th) (Max) @ Id :

5V @ 250μA

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Form :

Gull wing

Transistor Application :

SWITCHING

Gate to Source Voltage (Vgs) :

30V

Terminal Finish :

Tin (Sn)

Power Dissipation :

50W

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~150°C TJ

Fall Time (Typ) :

12 ns

Published :

2007