FDD6N25TM
- Mfr.Part #
- FDD6N25TM
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 250V 4.4A DPAK
- Stock
- 26,819
- In Stock :
- 26,819
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- REACH SVHC :
- No SVHC
- JESD-609 Code :
- e3
- Gate Charge (Qg) (Max) @ Vgs :
- 6nC @ 10V
- Continuous Drain Current (ID) :
- 4.4A
- Packaging :
- Tape and Reel (TR)
- Weight :
- 260.37mg
- Lifecycle Status :
- ACTIVE (Last Updated: 20 hours ago)
- Radiation Hardening :
- No
- Avalanche Energy Rating (Eas) :
- 45 mJ
- Number of Elements :
- 1
- Turn On Delay Time :
- 10 ns
- ECCN Code :
- EAR99
- Input Capacitance (Ciss) (Max) @ Vds :
- 250pF @ 25V
- Height :
- 2.39mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Element Configuration :
- Single
- Rise Time :
- 25ns
- JEDEC-95 Code :
- TO-252AA
- Width :
- 6.22mm
- Rds On (Max) @ Id, Vgs :
- 1.1 Ω @ 2.2A, 10V
- Power Dissipation-Max :
- 50W Tc
- Factory Lead Time :
- 4 Weeks
- Number of Terminations :
- 2
- Additional Feature :
- FAST SWITCHING
- Lead Free :
- Lead Free
- Number of Pins :
- 3
- Turn-Off Delay Time :
- 7 ns
- Transistor Element Material :
- SILICON
- Series :
- UniFET™
- FET Type :
- N-Channel
- Current - Continuous Drain (Id) @ 25°C :
- 4.4A Tc
- Mounting Type :
- Surface Mount
- Threshold Voltage :
- 5V
- Vgs (Max) :
- ±30V
- Operating Mode :
- ENHANCEMENT MODE
- Length :
- 6.73mm
- Pbfree Code :
- yes
- Case Connection :
- DRAIN
- Drain to Source Breakdown Voltage :
- 250V
- Mount :
- Surface Mount
- JESD-30 Code :
- R-PSSO-G2
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Terminal Form :
- Gull wing
- Transistor Application :
- SWITCHING
- Gate to Source Voltage (Vgs) :
- 30V
- Terminal Finish :
- Tin (Sn)
- Power Dissipation :
- 50W
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature :
- -55°C~150°C TJ
- Fall Time (Typ) :
- 12 ns
- Published :
- 2007
- Datasheets
- FDD6N25TM

N-Channel Tape & Reel (TR) 1.1 Ω @ 2.2A, 10V ±30V 250pF @ 25V 6nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
FDD6N25TM Description
Fairchild Semiconductor's high-voltage MOSFET family, the FDD6N25TM, is based on planar stripe and DMOS technology. This MOSFET has been designed to have lower on-state resistance, improved switching performance, and higher avalanche energy strength. This device series is ideal for power factor correction (PFC), flat panel display (FPD) TV power, ATX, and electronic lamp ballasts.
FDD6N25TM Features
?vgs = 10 V, ID = 22 A, rDS(on) = 1.1 Q (MaX.)
?Affordable Gate Charge (Typ. 4.5 nC)
?Extremely low Css (Typ. 5 pF)
?Avalanche tested to the nth degree
FDD6N25TM Applications
?TV (LCD/LED/PDP)
?Appliances for Consumers
?It's a lighting
?Power Supply That Isn't Interruptible
?Power Supply (AC-DC)
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