FDD6N25TM

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Mfr.Part #
FDD6N25TM
Manufacturer
onsemi
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
MOSFET N-CH 250V 4.4A DPAK
Stock
26,819
In Stock :
26,819

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Transistor Application :
SWITCHING
Operating Mode :
ENHANCEMENT MODE
REACH SVHC :
No SVHC
Number of Elements :
1
Published :
2007
Transistor Element Material :
SILICON
Number of Pins :
3
Lead Free :
Lead Free
Packaging :
Tape and Reel (TR)
Mount :
Surface Mount
Factory Lead Time :
4 Weeks
Threshold Voltage :
5V
Weight :
260.37mg
Width :
6.22mm
RoHS Status :
ROHS3 Compliant
Turn On Delay Time :
10 ns
Height :
2.39mm
Number of Terminations :
2
Fall Time (Typ) :
12 ns
Terminal Form :
Gull wing
JEDEC-95 Code :
TO-252AA
Rds On (Max) @ Id, Vgs :
1.1 Ω @ 2.2A, 10V
Terminal Finish :
Tin (Sn)
Gate Charge (Qg) (Max) @ Vgs :
6nC @ 10V
FET Type :
N-Channel
Element Configuration :
Single
JESD-609 Code :
e3
Mounting Type :
Surface Mount
Case Connection :
DRAIN
Lifecycle Status :
ACTIVE (Last Updated: 20 hours ago)
Vgs(th) (Max) @ Id :
5V @ 250μA
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Pbfree Code :
yes
Length :
6.73mm
Power Dissipation-Max :
50W Tc
ECCN Code :
EAR99
Continuous Drain Current (ID) :
4.4A
Current - Continuous Drain (Id) @ 25°C :
4.4A Tc
Gate to Source Voltage (Vgs) :
30V
Vgs (Max) :
±30V
Drain to Source Breakdown Voltage :
250V
Turn-Off Delay Time :
7 ns
Operating Temperature :
-55°C~150°C TJ
Avalanche Energy Rating (Eas) :
45 mJ
Additional Feature :
FAST SWITCHING
Power Dissipation :
50W
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Radiation Hardening :
No
Series :
UniFET™
JESD-30 Code :
R-PSSO-G2
Drive Voltage (Max Rds On,Min Rds On) :
10V
Input Capacitance (Ciss) (Max) @ Vds :
250pF @ 25V
Rise Time :
25ns
Datasheets
FDD6N25TM
Introducing Transistors - FETs, MOSFETs - Single onsemi FDD6N25TM from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Number of Terminations:2, Mounting Type:Surface Mount, Operating Temperature:-55°C~150°C TJ, Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, FDD6N25TM pinout, FDD6N25TM datasheet PDF, FDD6N25TM amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FDD6N25TM ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDD6N25TM


N-Channel Tape & Reel (TR) 1.1 Ω @ 2.2A, 10V ±30V 250pF @ 25V 6nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63

FDD6N25TM Description


Fairchild Semiconductor's high-voltage MOSFET family, the FDD6N25TM, is based on planar stripe and DMOS technology. This MOSFET has been designed to have lower on-state resistance, improved switching performance, and higher avalanche energy strength. This device series is ideal for power factor correction (PFC), flat panel display (FPD) TV power, ATX, and electronic lamp ballasts.


FDD6N25TM Features


?vgs = 10 V, ID = 22 A, rDS(on) = 1.1 Q (MaX.)


?Affordable Gate Charge (Typ. 4.5 nC)


?Extremely low Css (Typ. 5 pF)


?Avalanche tested to the nth degree



FDD6N25TM Applications


?TV (LCD/LED/PDP)


?Appliances for Consumers


?It's a lighting


?Power Supply That Isn't Interruptible


?Power Supply (AC-DC)


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