FDD6N25TM
- Mfr.Part #
- FDD6N25TM
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 250V 4.4A DPAK
- Stock
- 26,819
- In Stock :
- 26,819
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Transistor Application :
- SWITCHING
- Operating Mode :
- ENHANCEMENT MODE
- REACH SVHC :
- No SVHC
- Number of Elements :
- 1
- Published :
- 2007
- Transistor Element Material :
- SILICON
- Number of Pins :
- 3
- Lead Free :
- Lead Free
- Packaging :
- Tape and Reel (TR)
- Mount :
- Surface Mount
- Factory Lead Time :
- 4 Weeks
- Threshold Voltage :
- 5V
- Weight :
- 260.37mg
- Width :
- 6.22mm
- RoHS Status :
- ROHS3 Compliant
- Turn On Delay Time :
- 10 ns
- Height :
- 2.39mm
- Number of Terminations :
- 2
- Fall Time (Typ) :
- 12 ns
- Terminal Form :
- Gull wing
- JEDEC-95 Code :
- TO-252AA
- Rds On (Max) @ Id, Vgs :
- 1.1 Ω @ 2.2A, 10V
- Terminal Finish :
- Tin (Sn)
- Gate Charge (Qg) (Max) @ Vgs :
- 6nC @ 10V
- FET Type :
- N-Channel
- Element Configuration :
- Single
- JESD-609 Code :
- e3
- Mounting Type :
- Surface Mount
- Case Connection :
- DRAIN
- Lifecycle Status :
- ACTIVE (Last Updated: 20 hours ago)
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pbfree Code :
- yes
- Length :
- 6.73mm
- Power Dissipation-Max :
- 50W Tc
- ECCN Code :
- EAR99
- Continuous Drain Current (ID) :
- 4.4A
- Current - Continuous Drain (Id) @ 25°C :
- 4.4A Tc
- Gate to Source Voltage (Vgs) :
- 30V
- Vgs (Max) :
- ±30V
- Drain to Source Breakdown Voltage :
- 250V
- Turn-Off Delay Time :
- 7 ns
- Operating Temperature :
- -55°C~150°C TJ
- Avalanche Energy Rating (Eas) :
- 45 mJ
- Additional Feature :
- FAST SWITCHING
- Power Dissipation :
- 50W
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Radiation Hardening :
- No
- Series :
- UniFET™
- JESD-30 Code :
- R-PSSO-G2
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 250pF @ 25V
- Rise Time :
- 25ns
- Datasheets
- FDD6N25TM

N-Channel Tape & Reel (TR) 1.1 Ω @ 2.2A, 10V ±30V 250pF @ 25V 6nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
FDD6N25TM Description
Fairchild Semiconductor's high-voltage MOSFET family, the FDD6N25TM, is based on planar stripe and DMOS technology. This MOSFET has been designed to have lower on-state resistance, improved switching performance, and higher avalanche energy strength. This device series is ideal for power factor correction (PFC), flat panel display (FPD) TV power, ATX, and electronic lamp ballasts.
FDD6N25TM Features
?vgs = 10 V, ID = 22 A, rDS(on) = 1.1 Q (MaX.)
?Affordable Gate Charge (Typ. 4.5 nC)
?Extremely low Css (Typ. 5 pF)
?Avalanche tested to the nth degree
FDD6N25TM Applications
?TV (LCD/LED/PDP)
?Appliances for Consumers
?It's a lighting
?Power Supply That Isn't Interruptible
?Power Supply (AC-DC)
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