FDD6030L

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

14.5m Ω @ 12A, 10V

FET Type :

N-Channel

Series :

PowerTrench®

Case Connection :

DRAIN

JESD-30 Code :

R-PSSO-G2

Turn On Delay Time :

10 ns

Operating Temperature :

-55°C~175°C TJ

Element Configuration :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

3.2W Ta 56W Tc

Number of Pins :

3

Pbfree Code :

yes

Fall Time (Typ) :

12 ns

Current - Continuous Drain (Id) @ 25°C :

12A Ta 50A Tc

ECCN Code :

EAR99

Terminal Form :

Gull wing

Power Dissipation :

3.2W

Mount :

Surface Mount

Number of Terminations :

2

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Gate to Source Voltage (Vgs) :

20V

Turn-Off Delay Time :

29 ns

Gate Charge (Qg) (Max) @ Vgs :

28nC @ 5V

Weight :

260.37mg

Rise Time :

7ns

Continuous Drain Current (ID) :

50A

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

10 Weeks

Vgs(th) (Max) @ Id :

3V @ 250µA

Operating Mode :

ENHANCEMENT MODE

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Mounting Type :

Surface Mount

Vgs (Max) :

±20V

Transistor Application :

SWITCHING

Number of Elements :

1

Radiation Hardening :

No

Packaging :

Tape and Reel (TR)

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

1230pF @ 15V

Drain to Source Breakdown Voltage :

30V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V