FDD6530A

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation :

33W

Factory Lead Time :

10 Weeks

Gate to Source Voltage (Vgs) :

8V

Case Connection :

DRAIN

Lead Free :

Lead Free

Operating Temperature :

-55°C~175°C TJ

Current Rating :

21A

Input Capacitance (Ciss) (Max) @ Vds :

710pF @ 10V

Packaging :

Tape and Reel (TR)

Height :

2.39mm

Gate Charge (Qg) (Max) @ Vgs :

9nC @ 4.5V

Turn-Off Delay Time :

18 ns

Width :

6.22mm

Vgs(th) (Max) @ Id :

1.2V @ 250µA

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

RoHS Status :

ROHS3 Compliant

Turn On Delay Time :

8 ns

Voltage - Rated DC :

20V

Element Configuration :

Single

JESD-609 Code :

e3

JESD-30 Code :

R-PSSO-G2

FET Type :

N-Channel

Number of Elements :

1

Radiation Hardening :

No

Fall Time (Typ) :

4 ns

Rise Time :

7ns

Pbfree Code :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Weight :

260.37mg

Rds On (Max) @ Id, Vgs :

32m Ω @ 8A, 4.5V

Avalanche Energy Rating (Eas) :

55 mJ

Lifecycle Status :

ACTIVE (Last Updated: 14 hours ago)

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

Gull wing

Mounting Type :

Surface Mount

Length :

6.73mm

Power Dissipation-Max :

3.3W Ta 33W Tc

Continuous Drain Current (ID) :

21A

Mount :

Surface Mount

Transistor Element Material :

SILICON

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Number of Pins :

3

Drain to Source Breakdown Voltage :

20V

Series :

PowerTrench®

Current - Continuous Drain (Id) @ 25°C :

21A Ta

ECCN Code :

EAR99

Published :

2017

Terminal Finish :

Tin (Sn)

Number of Terminations :

2

Vgs (Max) :

±8V