FDD6530A
- Mfr.Part #
- FDD6530A
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 20V 21A TO252
- Stock
- 9,039
- In Stock :
- 9,039
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Turn On Delay Time :
- 8 ns
- Number of Elements :
- 1
- Transistor Application :
- SWITCHING
- Current - Continuous Drain (Id) @ 25°C :
- 21A Ta
- Factory Lead Time :
- 10 Weeks
- Operating Mode :
- ENHANCEMENT MODE
- Series :
- PowerTrench®
- Radiation Hardening :
- No
- Avalanche Energy Rating (Eas) :
- 55 mJ
- Number of Pins :
- 3
- Width :
- 6.22mm
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Operating Temperature :
- -55°C~175°C TJ
- Input Capacitance (Ciss) (Max) @ Vds :
- 710pF @ 10V
- Packaging :
- Tape and Reel (TR)
- Case Connection :
- DRAIN
- Fall Time (Typ) :
- 4 ns
- Power Dissipation :
- 33W
- Continuous Drain Current (ID) :
- 21A
- Drive Voltage (Max Rds On,Min Rds On) :
- 2.5V 4.5V
- FET Type :
- N-Channel
- JESD-609 Code :
- e3
- Number of Terminations :
- 2
- Rds On (Max) @ Id, Vgs :
- 32m Ω @ 8A, 4.5V
- Rise Time :
- 7ns
- Turn-Off Delay Time :
- 18 ns
- Current Rating :
- 21A
- Lead Free :
- Lead Free
- Published :
- 2017
- Pbfree Code :
- yes
- Weight :
- 260.37mg
- Drain to Source Breakdown Voltage :
- 20V
- RoHS Status :
- ROHS3 Compliant
- Terminal Finish :
- Tin (Sn)
- Element Configuration :
- Single
- Voltage - Rated DC :
- 20V
- Gate to Source Voltage (Vgs) :
- 8V
- Length :
- 6.73mm
- Vgs(th) (Max) @ Id :
- 1.2V @ 250µA
- Mount :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- Power Dissipation-Max :
- 3.3W Ta 33W Tc
- Mounting Type :
- Surface Mount
- Lifecycle Status :
- ACTIVE (Last Updated: 14 hours ago)
- Terminal Form :
- Gull wing
- Vgs (Max) :
- ±8V
- Height :
- 2.39mm
- Gate Charge (Qg) (Max) @ Vgs :
- 9nC @ 4.5V
- JESD-30 Code :
- R-PSSO-G2
- ECCN Code :
- EAR99
- Datasheets
- FDD6530A
FDD6530A Documents

N-Channel Tape & Reel (TR) 32m Ω @ 8A, 4.5V ±8V 710pF @ 10V 9nC @ 4.5V TO-252-3, DPak (2 Leads + Tab), SC-63
The FDD6530A is a PowerTrench? MOSFET with a 20V N-Channel. This N-Channel MOSFET was created with the goal of increasing the overall efficiency of DC/DC converters using synchronous or traditional switching PWM controllers. Low gate charge, low RDS(ON), and quick switching speed have all been tuned.
FDD6530A Features
● 21 A, 20 V RDS(ON) = 32 mW @ VGS = 4.5 V
RDS(ON) = 47 mW @ VGS = 2.5 V
● Low gate charge (6.5 nC typical)
● Fast switching
● High performance trench technology for extremely low RDS(ON)
● Lower RDS(on) and gate capacitance
FDD6530A Applications
● DC/DC Converter
● Motor Drives
● Switching Devices
● Power Converters
● Digital Circuits
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