FDD6606

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Mfr.Part #
FDD6606
Manufacturer
Fairchild Semiconductor
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
MOSFET N-CH 30V 75A DPAK
Stock
2,265
In Stock :
2,265

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Manufacturer :
Fairchild Semiconductor
Product Category :
Transistors - FETs, MOSFETs - Single
Operating Mode :
ENHANCEMENT MODE
Terminal Finish :
NOT SPECIFIED
Transistor Application :
SWITCHING
Current - Continuous Drain (Id) @ 25°C :
75A Ta
Packaging :
Tape and Reel (TR)
Transistor Element Material :
SILICON
Operating Temperature :
-55°C~175°C TJ
Vgs(th) (Max) @ Id :
3V @ 250µA
Mounting Type :
Surface Mount
Pulsed Drain Current-Max (IDM) :
100A
Configuration :
SINGLE WITH BUILT-IN DIODE
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Drain to Source Voltage (Vdss) :
30V
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Rds On (Max) @ Id, Vgs :
6m Ω @ 17A, 10V
FET Type :
N-Channel
Series :
PowerTrench®
DS Breakdown Voltage-Min :
30V
Surface Mount :
yes
Vgs (Max) :
±20V
Drain Current-Max (Abs) (ID) :
75A
Reach Compliance Code :
Unknown
Drain-source On Resistance-Max :
0.006Ohm
Pin Count :
3
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Gate Charge (Qg) (Max) @ Vgs :
31nC @ 5V
Terminal Position :
Single
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Power Dissipation-Max :
71W Tc
Input Capacitance (Ciss) (Max) @ Vds :
2.4pF @ 15V
Case Connection :
DRAIN
JESD-30 Code :
R-PSSO-G2
RoHS Status :
ROHS3 Compliant
Qualification Status :
COMMERCIAL
Terminal Form :
Gull wing
Avalanche Energy Rating (Eas) :
240 mJ
Number of Terminations :
2
Number of Elements :
1
Pbfree Code :
yes
Datasheets
FDD6606
Introducing Transistors - FETs, MOSFETs - Single Fairchild Semiconductor FDD6606 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~175°C TJ, Mounting Type:Surface Mount, Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, Number of Terminations:2, FDD6606 pinout, FDD6606 datasheet PDF, FDD6606 amp .Beyond Transistors - FETs, MOSFETs - Single Fairchild Semiconductor FDD6606 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Fairchild Semiconductor FDD6606


N-Channel Tape & Reel (TR) 6m Ω @ 17A, 10V ±20V 2.4pF @ 15V 31nC @ 5V 30V TO-252-3, DPak (2 Leads + Tab), SC-63

FDD6606 Overview


In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 240 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 2.4pF @ 15V.The drain current is the maximum continuous current this device can conduct, which is 75A.Pulsed drain current is maximum rated peak drain current 100A.A normal operation of the DS requires keeping the breakdown voltage above 30V.This transistor requires a drain-source voltage (Vdss) of 30V.In order to reduce power consumption, this device uses a drive voltage of 4.5V 10V volts (4.5V 10V).

FDD6606 Features


the avalanche energy rating (Eas) is 240 mJ
based on its rated peak drain current 100A.
a 30V drain to source voltage (Vdss)


FDD6606 Applications


There are a lot of Rochester Electronics, LLC
FDD6606 applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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