FDD6296

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

8.8m Ω @ 15A, 10V

Power Dissipation :

3.8W

Fall Time (Typ) :

13 ns

Continuous Drain Current (ID) :

50A

Terminal Finish :

Tin (Sn)

Voltage - Rated DC :

30V

Factory Lead Time :

10 Weeks

FET Type :

N-Channel

Number of Terminations :

2

Operating Temperature :

-55°C~175°C TJ

Mounting Type :

Surface Mount

Vgs (Max) :

±20V

Current Rating :

50A

Case Connection :

DRAIN

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Weight :

260.37mg

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Turn On Delay Time :

11 ns

ECCN Code :

EAR99

Pbfree Code :

yes

Gate to Source Voltage (Vgs) :

20V

RoHS Status :

ROHS3 Compliant

Resistance :

8.8MOhm

JESD-30 Code :

R-PSSO-G2

Transistor Application :

SWITCHING

JESD-609 Code :

e3

Drain to Source Breakdown Voltage :

30V

Input Capacitance (Ciss) (Max) @ Vds :

1440pF @ 15V

Lifecycle Status :

ACTIVE (Last Updated: 14 hours ago)

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Series :

PowerTrench®

Lead Free :

Lead Free

Power Dissipation-Max :

3.8W Ta 52W Tc

Element Configuration :

Single

Turn-Off Delay Time :

29 ns

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

Gull wing

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

31.5nC @ 10V

Radiation Hardening :

No

Number of Pins :

3

Mount :

Surface Mount

Vgs(th) (Max) @ Id :

3V @ 250µA

Current - Continuous Drain (Id) @ 25°C :

15A Ta 50A Tc

Rise Time :

6ns