FDD6632
- Mfr.Part #
- FDD6632
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 9A D-PAK
- Stock
- 8,026
- In Stock :
- 8,026
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- DS Breakdown Voltage-Min :
- 30V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Mode :
- ENHANCEMENT MODE
- Series :
- UltraFET™
- Terminal Form :
- Gull wing
- JESD-30 Code :
- R-PSSO-G2
- Surface Mount :
- yes
- Pin Count :
- 3
- Vgs (Max) :
- ±20V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Qualification Status :
- COMMERCIAL
- Mounting Type :
- Surface Mount
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Rds On (Max) @ Id, Vgs :
- 70m Ω @ 9A, 10V
- Case Connection :
- DRAIN
- Power Dissipation-Max :
- 15W Tc
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- JESD-609 Code :
- e3
- Pbfree Code :
- yes
- Operating Temperature :
- -55°C~175°C TJ
- FET Type :
- N-Channel
- Packaging :
- Tape and Reel (TR)
- Input Capacitance (Ciss) (Max) @ Vds :
- 255pF @ 15V
- Terminal Finish :
- MATTE TIN
- Current - Continuous Drain (Id) @ 25°C :
- 9A Tc
- Terminal Position :
- Single
- Peak Reflow Temperature (Cel) :
- 260
- Drain Current-Max (Abs) (ID) :
- 4A
- Transistor Application :
- SWITCHING
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Transistor Element Material :
- SILICON
- Number of Terminations :
- 2
- Number of Elements :
- 1
- RoHS Status :
- ROHS3 Compliant
- Drain to Source Voltage (Vdss) :
- 30V
- Gate Charge (Qg) (Max) @ Vgs :
- 4nC @ 5V
- Drain-source On Resistance-Max :
- 0.09Ohm
- Datasheets
- FDD6632

N-Channel Tape & Reel (TR) 70m Ω @ 9A, 10V ±20V 255pF @ 15V 4nC @ 5V 30V TO-252-3, DPak (2 Leads + Tab), SC-63
FDD6632 Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 255pF @ 15V maximal input capacitance.A device can conduct a maximum continuous current of [4A] according to its drain current.The DS breakdown voltage should be maintained above 30V to maintain normal operation.To operate this transistor, you will need a 30V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).
FDD6632 Features
a 30V drain to source voltage (Vdss)
FDD6632 Applications
There are a lot of Rochester Electronics, LLC
FDD6632 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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