FDD6632

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

3V @ 250µA

Series :

UltraFET™

Gate Charge (Qg) (Max) @ Vgs :

4nC @ 5V

Rds On (Max) @ Id, Vgs :

70m Ω @ 9A, 10V

Drain to Source Voltage (Vdss) :

30V

DS Breakdown Voltage-Min :

30V

FET Type :

N-Channel

Operating Temperature :

-55°C~175°C TJ

Configuration :

SINGLE WITH BUILT-IN DIODE

RoHS Status :

ROHS3 Compliant

Terminal Finish :

MATTE TIN

Number of Terminations :

2

JESD-609 Code :

e3

Terminal Position :

Single

Current - Continuous Drain (Id) @ 25°C :

9A Tc

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±20V

Pbfree Code :

yes

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Drain-source On Resistance-Max :

0.09Ohm

Transistor Element Material :

SILICON

Drain Current-Max (Abs) (ID) :

4A

Input Capacitance (Ciss) (Max) @ Vds :

255pF @ 15V

Case Connection :

DRAIN

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Peak Reflow Temperature (Cel) :

260

JESD-30 Code :

R-PSSO-G2

Qualification Status :

COMMERCIAL

Terminal Form :

Gull wing

Power Dissipation-Max :

15W Tc

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Surface Mount :

yes

Pin Count :

3