FDD6612A

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Mfr.Part #
FDD6612A
Manufacturer
onsemi
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
MOSFET N-CH 30V 9.5A/30A DPAK
Stock
8,964
In Stock :
8,964

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
RoHS Status :
ROHS3 Compliant
Gate Charge (Qg) (Max) @ Vgs :
9.4nC @ 5V
Current Rating :
30A
Power Dissipation :
36W
ECCN Code :
EAR99
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Number of Pins :
3
Operating Mode :
ENHANCEMENT MODE
JESD-609 Code :
e3
JESD-30 Code :
R-PSSO-G2
Rise Time :
5ns
Transistor Application :
SWITCHING
Pbfree Code :
yes
Lifecycle Status :
ACTIVE (Last Updated: 14 hours ago)
Resistance :
20mOhm
Transistor Element Material :
SILICON
Input Capacitance (Ciss) (Max) @ Vds :
660pF @ 15V
Weight :
260.37mg
Number of Terminations :
2
Drain Current-Max (Abs) (ID) :
9.5A
Voltage - Rated DC :
30V
Nominal Vgs :
2 V
FET Type :
N-Channel
Terminal Finish :
Tin (Sn)
Width :
6.22mm
Length :
6.73mm
Mount :
Surface Mount
REACH SVHC :
No SVHC
Turn-Off Delay Time :
24 ns
Mounting Type :
Surface Mount
Fall Time (Typ) :
4 ns
Power Dissipation-Max :
2.8W Ta 36W Tc
Series :
PowerTrench®
Threshold Voltage :
2V
Factory Lead Time :
10 Weeks
Drain to Source Breakdown Voltage :
30V
Height :
2.39mm
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Element Configuration :
Single
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Gate to Source Voltage (Vgs) :
20V
Turn On Delay Time :
9 ns
Packaging :
Tape and Reel (TR)
Pulsed Drain Current-Max (IDM) :
60A
Continuous Drain Current (ID) :
30A
Lead Free :
Lead Free
Radiation Hardening :
No
Number of Elements :
1
Vgs(th) (Max) @ Id :
3V @ 250µA
Avalanche Energy Rating (Eas) :
90 mJ
Published :
2004
Vgs (Max) :
±20V
Additional Feature :
LOGIC LEVEL COMPATIBLE
Rds On (Max) @ Id, Vgs :
20m Ω @ 9.5A, 10V
Current - Continuous Drain (Id) @ 25°C :
9.5A Ta 30A Tc
Operating Temperature :
-55°C~175°C TJ
Terminal Form :
Gull wing
Case Connection :
DRAIN
Introducing Transistors - FETs, MOSFETs - Single onsemi FDD6612A from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Number of Terminations:2, Mounting Type:Surface Mount, Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, Operating Temperature:-55°C~175°C TJ, FDD6612A pinout, FDD6612A datasheet PDF, FDD6612A amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FDD6612A ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDD6612A


N-Channel Tape & Reel (TR) 20m Ω @ 9.5A, 10V ±20V 660pF @ 15V 9.4nC @ 5V TO-252-3, DPak (2 Leads + Tab), SC-63

FDD6612A Description


FDD6612AThe FDD6612A is a PowerTrench? MOSFET with a 30V N-Channel. This N-Channel MOSFET was created with the goal of increasing the overall efficiency of DC/DC converters using synchronous or traditional switching PWM controllers. In a compact package, it has been tuned for low gate charge, low RDS(ON), quick switching speed, and exceptionally low RDS(ON).



FDD6612A Features



? 30 A, 30 V RDS(ON) = 20 mW @ VGS = 10 V

RDS(ON) = 28 mW @ VGS = 4.5 V

? Low entry fee

? Quick switchover

? Trench technique with high performance for exceptionally low RDS (ON)

? The current through the channel gets enhanced due to increase in gate voltage



FDD6612A Applications



? DC/DC converter

? Motor Drives

? Industrial

? Automotive Applications


? Use of Electronic Devices to Switch and Amplify Electronic Signals

? Inverter

? Digital Circuits

? Function As High-frequency Amplifiers
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