FDD6612A

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Length :

6.73mm

Factory Lead Time :

10 Weeks

Published :

2004

Packaging :

Tape and Reel (TR)

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

REACH SVHC :

No SVHC

Power Dissipation-Max :

2.8W Ta 36W Tc

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

3V @ 250µA

Operating Mode :

ENHANCEMENT MODE

Avalanche Energy Rating (Eas) :

90 mJ

Power Dissipation :

36W

RoHS Status :

ROHS3 Compliant

Number of Terminations :

2

Pulsed Drain Current-Max (IDM) :

60A

Height :

2.39mm

Gate Charge (Qg) (Max) @ Vgs :

9.4nC @ 5V

Number of Elements :

1

Voltage - Rated DC :

30V

Additional Feature :

LOGIC LEVEL COMPATIBLE

Rds On (Max) @ Id, Vgs :

20m Ω @ 9.5A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Nominal Vgs :

2 V

Gate to Source Voltage (Vgs) :

20V

Threshold Voltage :

2V

FET Type :

N-Channel

Transistor Application :

SWITCHING

Pbfree Code :

yes

Input Capacitance (Ciss) (Max) @ Vds :

660pF @ 15V

JESD-609 Code :

e3

Number of Pins :

3

Terminal Finish :

Tin (Sn)

Rise Time :

5ns

Turn-Off Delay Time :

24 ns

Resistance :

20mOhm

JESD-30 Code :

R-PSSO-G2

Fall Time (Typ) :

4 ns

Continuous Drain Current (ID) :

30A

Current Rating :

30A

Lifecycle Status :

ACTIVE (Last Updated: 14 hours ago)

Mount :

Surface Mount

Width :

6.22mm

Case Connection :

DRAIN

Operating Temperature :

-55°C~175°C TJ

Turn On Delay Time :

9 ns

Element Configuration :

Single

Current - Continuous Drain (Id) @ 25°C :

9.5A Ta 30A Tc

Radiation Hardening :

No

Mounting Type :

Surface Mount

Vgs (Max) :

±20V

Drain to Source Breakdown Voltage :

30V

Weight :

260.37mg

Series :

PowerTrench®

Lead Free :

Lead Free

Terminal Form :

Gull wing

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Drain Current-Max (Abs) (ID) :

9.5A