FDD6612A

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Fall Time (Typ) :

4 ns

Nominal Vgs :

2 V

Weight :

260.37mg

Gate Charge (Qg) (Max) @ Vgs :

9.4nC @ 5V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Mounting Type :

Surface Mount

ECCN Code :

EAR99

Case Connection :

DRAIN

Threshold Voltage :

2V

Rds On (Max) @ Id, Vgs :

20m Ω @ 9.5A, 10V

Lead Free :

Lead Free

Voltage - Rated DC :

30V

REACH SVHC :

No SVHC

Turn-Off Delay Time :

24 ns

Terminal Finish :

Tin (Sn)

JESD-30 Code :

R-PSSO-G2

Vgs(th) (Max) @ Id :

3V @ 250µA

Transistor Application :

SWITCHING

Mount :

Surface Mount

Operating Temperature :

-55°C~175°C TJ

Radiation Hardening :

No

Factory Lead Time :

10 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

660pF @ 15V

Resistance :

20mOhm

Number of Pins :

3

Pulsed Drain Current-Max (IDM) :

60A

Current - Continuous Drain (Id) @ 25°C :

9.5A Ta 30A Tc

Terminal Form :

Gull wing

Packaging :

Tape and Reel (TR)

Drain Current-Max (Abs) (ID) :

9.5A

Number of Elements :

1

JESD-609 Code :

e3

Lifecycle Status :

ACTIVE (Last Updated: 14 hours ago)

RoHS Status :

ROHS3 Compliant

Current Rating :

30A

Rise Time :

5ns

Transistor Element Material :

SILICON

Number of Terminations :

2

Width :

6.22mm

Height :

2.39mm

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Continuous Drain Current (ID) :

30A

Additional Feature :

LOGIC LEVEL COMPATIBLE

Element Configuration :

Single

Avalanche Energy Rating (Eas) :

90 mJ

Drain to Source Breakdown Voltage :

30V

FET Type :

N-Channel

Power Dissipation :

36W

Length :

6.73mm

Gate to Source Voltage (Vgs) :

20V

Pbfree Code :

yes

Power Dissipation-Max :

2.8W Ta 36W Tc

Series :

PowerTrench®

Turn On Delay Time :

9 ns

Published :

2004

Vgs (Max) :

±20V