FDD6612A
- Mfr.Part #
- FDD6612A
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 9.5A/30A DPAK
- Stock
- 8,964
- In Stock :
- 8,964
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Operating Mode :
- ENHANCEMENT MODE
- Fall Time (Typ) :
- 4 ns
- Nominal Vgs :
- 2 V
- Weight :
- 260.37mg
- Gate Charge (Qg) (Max) @ Vgs :
- 9.4nC @ 5V
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Mounting Type :
- Surface Mount
- ECCN Code :
- EAR99
- Case Connection :
- DRAIN
- Threshold Voltage :
- 2V
- Rds On (Max) @ Id, Vgs :
- 20m Ω @ 9.5A, 10V
- Lead Free :
- Lead Free
- Voltage - Rated DC :
- 30V
- REACH SVHC :
- No SVHC
- Turn-Off Delay Time :
- 24 ns
- Terminal Finish :
- Tin (Sn)
- JESD-30 Code :
- R-PSSO-G2
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Transistor Application :
- SWITCHING
- Mount :
- Surface Mount
- Operating Temperature :
- -55°C~175°C TJ
- Radiation Hardening :
- No
- Factory Lead Time :
- 10 Weeks
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Input Capacitance (Ciss) (Max) @ Vds :
- 660pF @ 15V
- Resistance :
- 20mOhm
- Number of Pins :
- 3
- Pulsed Drain Current-Max (IDM) :
- 60A
- Current - Continuous Drain (Id) @ 25°C :
- 9.5A Ta 30A Tc
- Terminal Form :
- Gull wing
- Packaging :
- Tape and Reel (TR)
- Drain Current-Max (Abs) (ID) :
- 9.5A
- Number of Elements :
- 1
- JESD-609 Code :
- e3
- Lifecycle Status :
- ACTIVE (Last Updated: 14 hours ago)
- RoHS Status :
- ROHS3 Compliant
- Current Rating :
- 30A
- Rise Time :
- 5ns
- Transistor Element Material :
- SILICON
- Number of Terminations :
- 2
- Width :
- 6.22mm
- Height :
- 2.39mm
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Continuous Drain Current (ID) :
- 30A
- Additional Feature :
- LOGIC LEVEL COMPATIBLE
- Element Configuration :
- Single
- Avalanche Energy Rating (Eas) :
- 90 mJ
- Drain to Source Breakdown Voltage :
- 30V
- FET Type :
- N-Channel
- Power Dissipation :
- 36W
- Length :
- 6.73mm
- Gate to Source Voltage (Vgs) :
- 20V
- Pbfree Code :
- yes
- Power Dissipation-Max :
- 2.8W Ta 36W Tc
- Series :
- PowerTrench®
- Turn On Delay Time :
- 9 ns
- Published :
- 2004
- Vgs (Max) :
- ±20V
- Datasheets
- FDD6612A
FDD6612A Documents

N-Channel Tape & Reel (TR) 20m Ω @ 9.5A, 10V ±20V 660pF @ 15V 9.4nC @ 5V TO-252-3, DPak (2 Leads + Tab), SC-63
FDD6612AThe FDD6612A is a PowerTrench? MOSFET with a 30V N-Channel. This N-Channel MOSFET was created with the goal of increasing the overall efficiency of DC/DC converters using synchronous or traditional switching PWM controllers. In a compact package, it has been tuned for low gate charge, low RDS(ON), quick switching speed, and exceptionally low RDS(ON).
FDD6612A Features
? 30 A, 30 V RDS(ON) = 20 mW @ VGS = 10 V
RDS(ON) = 28 mW @ VGS = 4.5 V
? Low entry fee
? Quick switchover
? Trench technique with high performance for exceptionally low RDS (ON)
? The current through the channel gets enhanced due to increase in gate voltage
FDD6612A Applications
? DC/DC converter
? Motor Drives
? Industrial
? Automotive Applications
? Use of Electronic Devices to Switch and Amplify Electronic Signals
? Inverter
? Digital Circuits
? Function As High-frequency Amplifiers
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