FDD6612A

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

9.4nC @ 5V

Current Rating :

30A

Power Dissipation :

36W

ECCN Code :

EAR99

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Number of Pins :

3

Operating Mode :

ENHANCEMENT MODE

JESD-609 Code :

e3

JESD-30 Code :

R-PSSO-G2

Rise Time :

5ns

Transistor Application :

SWITCHING

Pbfree Code :

yes

Lifecycle Status :

ACTIVE (Last Updated: 14 hours ago)

Resistance :

20mOhm

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

660pF @ 15V

Weight :

260.37mg

Number of Terminations :

2

Drain Current-Max (Abs) (ID) :

9.5A

Voltage - Rated DC :

30V

Nominal Vgs :

2 V

FET Type :

N-Channel

Terminal Finish :

Tin (Sn)

Width :

6.22mm

Length :

6.73mm

Mount :

Surface Mount

REACH SVHC :

No SVHC

Turn-Off Delay Time :

24 ns

Mounting Type :

Surface Mount

Fall Time (Typ) :

4 ns

Power Dissipation-Max :

2.8W Ta 36W Tc

Series :

PowerTrench®

Threshold Voltage :

2V

Factory Lead Time :

10 Weeks

Drain to Source Breakdown Voltage :

30V

Height :

2.39mm

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Element Configuration :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

20V

Turn On Delay Time :

9 ns

Packaging :

Tape and Reel (TR)

Pulsed Drain Current-Max (IDM) :

60A

Continuous Drain Current (ID) :

30A

Lead Free :

Lead Free

Radiation Hardening :

No

Number of Elements :

1

Vgs(th) (Max) @ Id :

3V @ 250µA

Avalanche Energy Rating (Eas) :

90 mJ

Published :

2004

Vgs (Max) :

±20V

Additional Feature :

LOGIC LEVEL COMPATIBLE

Rds On (Max) @ Id, Vgs :

20m Ω @ 9.5A, 10V

Current - Continuous Drain (Id) @ 25°C :

9.5A Ta 30A Tc

Operating Temperature :

-55°C~175°C TJ

Terminal Form :

Gull wing

Case Connection :

DRAIN