FDD6N25TF

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Mfr.Part #
FDD6N25TF
Manufacturer
onsemi
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
MOSFET N-CH 250V 4.4A DPAK
Stock
25,936
In Stock :
25,936

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Case Connection :
DRAIN
DS Breakdown Voltage-Min :
250V
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Drive Voltage (Max Rds On,Min Rds On) :
10V
Transistor Application :
SWITCHING
Mounting Type :
Surface Mount
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Power Dissipation-Max :
50W Tc
Series :
UniFET™
JESD-609 Code :
e3
Pin Count :
3
Configuration :
SINGLE WITH BUILT-IN DIODE
Drain to Source Voltage (Vdss) :
250V
Terminal Position :
Single
JESD-30 Code :
R-PSSO-G2
Gate Charge (Qg) (Max) @ Vgs :
6nC @ 10V
Terminal Finish :
MATTE TIN
Packaging :
Tape and Reel (TR)
Drain Current-Max (Abs) (ID) :
4.4A
Rds On (Max) @ Id, Vgs :
1.1 Ω @ 2.2A, 10V
Current - Continuous Drain (Id) @ 25°C :
4.4A Tc
Vgs(th) (Max) @ Id :
5V @ 250μA
Vgs (Max) :
±30V
JEDEC-95 Code :
TO-252AA
Pbfree Code :
yes
Qualification Status :
COMMERCIAL
Number of Elements :
1
Terminal Form :
Gull wing
Operating Temperature :
-55°C~150°C TJ
Operating Mode :
ENHANCEMENT MODE
Transistor Element Material :
SILICON
FET Type :
N-Channel
RoHS Status :
ROHS3 Compliant
Surface Mount :
yes
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Number of Terminations :
2
Pulsed Drain Current-Max (IDM) :
18A
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Avalanche Energy Rating (Eas) :
45 mJ
Input Capacitance (Ciss) (Max) @ Vds :
250pF @ 25V
Additional Feature :
FAST SWITCHING
Datasheets
FDD6N25TF
Introducing Transistors - FETs, MOSFETs - Single onsemi FDD6N25TF from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type:Surface Mount, Operating Temperature:-55°C~150°C TJ, Number of Terminations:2, FDD6N25TF pinout, FDD6N25TF datasheet PDF, FDD6N25TF amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FDD6N25TF ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDD6N25TF


N-Channel Tape & Reel (TR) 1.1 Ω @ 2.2A, 10V ±30V 250pF @ 25V 6nC @ 10V 250V TO-252-3, DPak (2 Leads + Tab), SC-63

FDD6N25TF Overview


The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 45 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 250pF @ 25V is its maximum input capacitance.Drain current refers to the maximum continuous current a device can conduct, and it is 4.4A.Peak drain current is 18A, which is the maximum pulsed drain current.Normal operation requires that the DS breakdown voltage remain above 250V.For this transistor to work, a voltage 250V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

FDD6N25TF Features


the avalanche energy rating (Eas) is 45 mJ
based on its rated peak drain current 18A.
a 250V drain to source voltage (Vdss)


FDD6N25TF Applications


There are a lot of Rochester Electronics, LLC
FDD6N25TF applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
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