FDD6N25TF
- Mfr.Part #
- FDD6N25TF
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 250V 4.4A DPAK
- Stock
- 25,936
- In Stock :
- 25,936
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Case Connection :
- DRAIN
- DS Breakdown Voltage-Min :
- 250V
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Transistor Application :
- SWITCHING
- Mounting Type :
- Surface Mount
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Power Dissipation-Max :
- 50W Tc
- Series :
- UniFET™
- JESD-609 Code :
- e3
- Pin Count :
- 3
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Drain to Source Voltage (Vdss) :
- 250V
- Terminal Position :
- Single
- JESD-30 Code :
- R-PSSO-G2
- Gate Charge (Qg) (Max) @ Vgs :
- 6nC @ 10V
- Terminal Finish :
- MATTE TIN
- Packaging :
- Tape and Reel (TR)
- Drain Current-Max (Abs) (ID) :
- 4.4A
- Rds On (Max) @ Id, Vgs :
- 1.1 Ω @ 2.2A, 10V
- Current - Continuous Drain (Id) @ 25°C :
- 4.4A Tc
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Vgs (Max) :
- ±30V
- JEDEC-95 Code :
- TO-252AA
- Pbfree Code :
- yes
- Qualification Status :
- COMMERCIAL
- Number of Elements :
- 1
- Terminal Form :
- Gull wing
- Operating Temperature :
- -55°C~150°C TJ
- Operating Mode :
- ENHANCEMENT MODE
- Transistor Element Material :
- SILICON
- FET Type :
- N-Channel
- RoHS Status :
- ROHS3 Compliant
- Surface Mount :
- yes
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Number of Terminations :
- 2
- Pulsed Drain Current-Max (IDM) :
- 18A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Avalanche Energy Rating (Eas) :
- 45 mJ
- Input Capacitance (Ciss) (Max) @ Vds :
- 250pF @ 25V
- Additional Feature :
- FAST SWITCHING
- Datasheets
- FDD6N25TF

N-Channel Tape & Reel (TR) 1.1 Ω @ 2.2A, 10V ±30V 250pF @ 25V 6nC @ 10V 250V TO-252-3, DPak (2 Leads + Tab), SC-63
FDD6N25TF Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 45 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 250pF @ 25V is its maximum input capacitance.Drain current refers to the maximum continuous current a device can conduct, and it is 4.4A.Peak drain current is 18A, which is the maximum pulsed drain current.Normal operation requires that the DS breakdown voltage remain above 250V.For this transistor to work, a voltage 250V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
FDD6N25TF Features
the avalanche energy rating (Eas) is 45 mJ
based on its rated peak drain current 18A.
a 250V drain to source voltage (Vdss)
FDD6N25TF Applications
There are a lot of Rochester Electronics, LLC
FDD6N25TF applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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