FDD6N20TM

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Operating Temperature :

-55°C~150°C TJ

Turn On Delay Time :

8.3 ns

Current - Continuous Drain (Id) @ 25°C :

4.5A Tc

JESD-30 Code :

R-PSSO-G2

Operating Mode :

ENHANCEMENT MODE

Radiation Hardening :

No

Gate Charge (Qg) (Max) @ Vgs :

6.1nC @ 10V

Avalanche Energy Rating (Eas) :

60 mJ

Rds On (Max) @ Id, Vgs :

800m Ω @ 2.3A, 10V

Vgs(th) (Max) @ Id :

5V @ 250μA

RoHS Status :

ROHS3 Compliant

Drain to Source Breakdown Voltage :

200V

Turn-Off Delay Time :

15 ns

Resistance :

800mOhm

Vgs (Max) :

±30V

Threshold Voltage :

5V

Fall Time (Typ) :

12.8 ns

Mount :

Surface Mount

REACH SVHC :

No SVHC

JESD-609 Code :

e3

Terminal Form :

Gull wing

Element Configuration :

Single

Mounting Type :

Surface Mount

Lifecycle Status :

ACTIVE (Last Updated: 19 hours ago)

Factory Lead Time :

4 Weeks

Power Dissipation :

40W

Drive Voltage (Max Rds On,Min Rds On) :

10V

Input Capacitance (Ciss) (Max) @ Vds :

230pF @ 25V

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Series :

UniFET™

Packaging :

Tape and Reel (TR)

Number of Terminations :

2

Contact Plating :

Tin

Continuous Drain Current (ID) :

4.5A

Number of Pins :

3

ECCN Code :

EAR99

Gate to Source Voltage (Vgs) :

30V

Rise Time :

5.6ns

FET Type :

N-Channel

Pbfree Code :

yes

Power Dissipation-Max :

40W Tc

Lead Free :

Lead Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Weight :

260.37mg