FDD6N20TF

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pbfree Code :

yes

Input Capacitance (Ciss) (Max) @ Vds :

230pF @ 25V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Temperature :

-55°C~150°C TJ

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE

Series :

UniFET™

JESD-609 Code :

e3

Pulsed Drain Current-Max (IDM) :

18A

Pin Count :

3

Number of Terminations :

2

Vgs(th) (Max) @ Id :

5V @ 250μA

Number of Elements :

1

Terminal Form :

Gull wing

Transistor Application :

SWITCHING

Terminal Position :

Single

Drain Current-Max (Abs) (ID) :

4.5A

FET Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±30V

Rds On (Max) @ Id, Vgs :

800m Ω @ 2.3A, 10V

Surface Mount :

yes

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

JESD-30 Code :

R-PSSO-G2

Drain to Source Voltage (Vdss) :

200V

Terminal Finish :

MATTE TIN

Mounting Type :

Surface Mount

Power Dissipation-Max :

40W Tc

Drain-source On Resistance-Max :

0.8Ohm

DS Breakdown Voltage-Min :

200V

Avalanche Energy Rating (Eas) :

60 mJ

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Qualification Status :

COMMERCIAL

Configuration :

SINGLE WITH BUILT-IN DIODE

Packaging :

Tape and Reel (TR)

Current - Continuous Drain (Id) @ 25°C :

4.5A Tc

Reach Compliance Code :

Unknown

Gate Charge (Qg) (Max) @ Vgs :

6.1nC @ 10V