FDD6796

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

2

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Surface Mount

DS Breakdown Voltage-Min :

25V

FET Type :

N-Channel

Pin Count :

3

Surface Mount :

yes

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

20A Ta 40A Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs (Max) :

±20V

Drain Current-Max (Abs) (ID) :

20A

Operating Temperature :

-55°C~175°C TJ

Avalanche Energy Rating (Eas) :

39 mJ

Series :

PowerTrench®

Input Capacitance (Ciss) (Max) @ Vds :

2.315pF @ 13V

Terminal Form :

Gull wing

Gate Charge (Qg) (Max) @ Vgs :

41nC @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Power Dissipation-Max :

3.7W Ta 42W Tc

Rds On (Max) @ Id, Vgs :

5.7m Ω @ 20A, 10V

Qualification Status :

COMMERCIAL

Drain-source On Resistance-Max :

0.0057Ohm

Drain to Source Voltage (Vdss) :

25V

RoHS Status :

ROHS3 Compliant

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Packaging :

Tape and Reel (TR)

Terminal Position :

Single

JESD-30 Code :

R-PSSO-G2

Pulsed Drain Current-Max (IDM) :

100A

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Reach Compliance Code :

Unknown

Case Connection :

DRAIN

Vgs(th) (Max) @ Id :

3V @ 250µA